Abstract: A semiconductor-superconductor hybrid device comprises a semiconductor component configured to host a 2DEG or a 2DHG; a superconductor component for inducing superconductivity in a channel of the semiconductor component; and a set of depletion gates. The superconductor component comprises a grounded strip of superconductor. The depletion gates comprise a first outer gate for defining a first outer segment; a second outer gate for defining a second outer segment, and an inner gate for defining an inner segment of the channel. The device further comprises a first junction comprising a space between the first outer gate and the inner gate, and a helper gate for gating the first space; and a second junction comprising a space between the second outer gate and the inner gate, and a helper gate for gating the second space. The helper gates are operable to connect the channel to leads.

Abstract: A semiconductor-superconductor hybrid device comprises a semiconductor component which, when in use, comprises a channel in the form of a nanowire; a superconductor component capable of inducing superconductivity in the semiconductor component by proximity effect; and an array of finger gates. The finger gates are individually operable to apply respective electrostatic fields to respective segments of the channel. The array of finger gates allows for localized control over electrical potentials in the corresponding segments of the nanowire. Also provided are methods of fabricating and operating the semiconductor-superconductor hybrid device.