Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above at least one of the first electrode and the second electrode, where the sensitive layer is formed from a composition including a polyimide and a hydrophobic filler. A dust protection layer is disposed above the sensitive layer.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: Various embodiments disclosed relate to anti-static compositions and gloves made from the same. In various embodiments, the present invention provides a doped polyaniline comprising a dopant that is a polyacrylic acid; a polymethacrylic acid; a sulfonatocalixarene; a cyclodextrin sulfate; a compound having the structure: wherein R2 is chosen from substituted or unsubstituted (C1-C10)hydrocarbyl- and substituted or unsubstituted (C1-C10)hydrocarbyl-O—, L1 is substituted or unsubstituted (C1-C10)hydrocarbylene, L2 is chosen from a bond, —O—, —O—C(O)—, and —NH—C(O)—, and n is about 1 to about 100,000; a salt thereof; or a combination thereof.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Abstract: Described is a multilayer glove (100) comprising at least one inner layer (230) having a thickness ti, a top surface, and a bottom surface, the bottom surface facing a hand of a user when wearing the glove; at least one inner protective layer (225) having a thickness tip, a top surface, and a bottom surface, the bottom surface abutting the top surface of the inner layer (230); an outer layer (210) having a thickness to, a top surface, and a bottom surface, the bottom surface facing a hand of a user when wearing the glove; at least one outer protective layer (215) having a thickness top, a top surface, and a bottom surface, the top surface abutting the bottom surface of the outer layer (210); and at least one indicator layer (220) having a thickness tc disposed between the top surface of the inner protective layer (225) and the bottom surface of the outer protective layer (215), wherein the indicator layer comprises at least one pH indicator that generates a color visible at the top surface of the outer layer

Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Abstract: In an embodiment, a method for fabrication of VOC sensor comprises dissolving one or more metal precursors in a reagent to form a solution, adding a reducing agent to precipitate a metal oxide compound, subjecting the solution to acoustic energy, recovering a nanoscale metal oxide, and forming a sensing layer in a chemo-resistance sensor using the nanoscale metal oxide.

Abstract: An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

Abstract: Various embodiments disclosed relate to anti-static compositions and gloves made from the same. In various embodiments, the present invention provides a doped polyaniline comprising a dopant that is a polyacrylic acid; a polymethacrylic acid; a sulfonatocalixarene; a cyclodextrin sulfate; a compound having the structure: wherein R2 is chosen from substituted or unsubstituted (C1-C10)hydrocarbyl- and substituted or unsubstituted (C1-C10)hydrocarbyl-O—. L1 is substituted or unsubstituted (C1-C10)hydrocarbylene. L2 is chosen from a bond, —O—, —O—C(O)—, and —NH—C(O)—, and n is about 1 to about 100,000; a salt thereof; or a combination thereof.

Abstract: The present disclosure relates to a nanostructured palladium-based flammable gas detector synthesized using sonochemistry. The nanostructured palladium-based flammable gas detectors may use nanostructured sensing materials to allow reduction of power consumption, where the nanostructures reduce power consumption due to their large specific area and increased porosity.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above at least one of the first electrode and the second electrode, where the sensitive layer is formed from a composition including a polyimide and a hydrophobic filler. A dust protection layer is disposed above the sensitive layer.

Abstract: A humidity sensor having a sensing component and a reference component. Each component may indicate humidity by using a transistor that has an upper gate dielectric layer with a dielectric constant which varies according to exposure to a change of moisture. The sensing component may have its upper gate dielectric layer exposed to an ambient environment. The reference component may have its upper gate dielectric layer with an absence of exposure to any environment. Sensing and reference transistor outputs may be processed with differential electronics to provide an output to indicate humidity in the ambient environment. Differential processing may reflect an output having a high common mode rejection ratio. An example of an upper gate dielectric layer deposited over a thin gate dielectric layer may be a hydrophobic polymer material. Other materials may instead be used. The components and processing electronics may be transistor circuits fabricated with integrated circuit technology.

Abstract: The present disclosure relates to a nanostructured palladium-based flammable gas detector synthesized using sonochemistry. The nanostructured palladium-based flammable gas detectors may use nanostructured sensing materials to allow reduction of power consumption, where the nanostructures reduce power consumption due to their large specific area and increased porosity.

Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.