Abstract: The present disclosure provides a method for treating a surface portion of a TCO material in a semiconductor device that comprises a structure arranged to facilitate current flow in one direction. To perform the method the surface portion of the TCO is exposed to an electrolyte and a current is induced in the device. The current allows reducing the TCO material in a manner such that the adhesion of a metallic material to the exposed surface portion is improved over the adhesion of the metallic material to a non-exposed surface portion.

Abstract: The present disclosure provides a structured connector for positioning on, and electrically coupling to, a surface of a device component. The connector has a bottom portion for contacting the surface of the device component and comprises an electrically conductive material. Further the connector has at least one light diverting surface portion that is oriented relative to the surface of the device component such that, in use, light directed at normal incidence relative to the surface of the device component is received by the at least one light diverting surface portion such that the received light is diverted towards an exposed adjacent surface of the device component.

Abstract: The present disclosure provides a method of forming a device structure. The method comprises providing at least one device component having front and rear device component surfaces and having at least one electrically conductive region on at least one of the device component surfaces. The method further comprises providing at least one contact sheet comprising a polymeric material and at least one electrically conductive element that has a non-circular cross-sectional shape and is embedded in the polymeric material in a manner such that a surface portion of the at least one electrically conductive element is exposed. The method also comprises applying a bonding material to either one or both of the exposed surface portion and at least one of the electrically conductive regions on the at least one of the device component surfaces.

Abstract: The present disclosure provides a method of reducing the thermomechanical stress in the silicon solar cells induced in the interconnection process. The front and rear metal electrodes of the solar cell are provided in such a way that the outermost bonding point between the front metal electrodes and the front interconnects (ribbons or wires) is aligned to the outermost bonding point between the rear metal electrodes and the rear interconnects. The method is applicable to busbar-based interconnection using stringing/tabbing process and wire-based interconnection such as Multi-Busbar and smart wire connection technology. The method can be applied to both mono-facial and bifacial solar cells. The reduced-area busbar end in the busbar-based interconnection increases the tolerance of misalignment of the outermost bonding points introduced by the manufacturing processes.

Abstract: The present disclosure provides a method of patterning a polymeric layer based on the chemical reaction of two chemical compounds. One chemical compound is provided in the polymeric layer and another chemical compound is deposited on the polymeric layer by, for example, ink-jet printing. The method allows for fabrication of, for example, metallization patterns for solar cells electronic components, integrated devices and formation of selective doped areas in solar cells amongst others.

Abstract: The present disclosure provides a method for treating a surface portion of a TCO material in a semiconductor device that comprises a structure arranged to facilitate current flow in one direction. To perform the method the surface portion of the TCO is exposed to an electrolyte and a current is induced in the device. The current allows reducing the TCO material in a manner such that the adhesion of a metallic material to the exposed surface portion is improved over the adhesion of the metallic material to a non-exposed surface portion.

Abstract: The present disclosure provides a method of patterning a polymeric layer based on the chemical reaction of two chemical compounds. One chemical compound is provided in the polymeric layer and another chemical compound is deposited on the polymeric layer by, for example, ink-jet printing. The method allows for fabrication of, for example, metallisation patterns for solar cells electronic components, integrated devices and formation of selective doped areas in solar cells amongst others.

Abstract: A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.

Abstract: A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.

Abstract: A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer. The metal layer is then anodized to form a porous layer and a material layer is deposited over a surface of the porous layer such that the material deposits on the surface of the porous layer without contacting the silicon surface.

Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

Abstract: A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.

Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

Abstract: A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidising the exposed surface to form an oxide layer.

Abstract: A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer. The metal layer is then anodized to form a porous layer and a material layer is deposited over a surface of the porous layer such that the material deposits on the surface of the porous layer without contacting the silicon surface.

Abstract: A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a sheet resistance of 10-40 ?/?. The emitter surface layer is then etched back to increase the sheet resistance of the emitter surface layer. Finally the surface is selectively plated. A method of fabrication of a silicon solar cell includes performing a front surface emitter diffusion of n-type dopant and then performing a dielectric deposition on the front surface by PECVD. The dielectric deposition comprises: a. growth of a thin silicon oxide; b. PECVD deposition of silicon nitride to achieve a silicon nitride. The silicon is then annealed to drive hydrogen from the silicon nitride layer into the silicon to passivate the silicon.

Abstract: A method of forming point metal electrical contacts to a semiconductor surface of a semiconductor device is provided. In a first step a first metal layer is formed over the semiconductor surface. The first metal layer is then anodised to create a porous metal-oxide layer formed over the semiconductor surface. The pores in the porous metal-oxide layer will thus form an array of openings in the porous metal-oxide layer. A contact metal layer is then formed over the porous metal-oxide layer such that parts of the contact metal layer extend into openings of the array of openings. The contact metal layer electrically contacts the semiconductor surface through the array of openings in the porous metal-oxide layer. A dielectric layer may optionally be formed over the semiconductor surface and the porous metal-oxide layer the formed over the dielectric layer and the contact metal then contacts the semiconductor surface through the dielectric layer.

Abstract: A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a sheet resistance of 10-40 ?/?. The emitter surface layer is then etched back to increase the sheet resistance of the emitter surface layer. Finally the surface is selectively plated. A method of fabrication of a silicon solar cell includes performing a front surface emitter diffusion of n-type dopant and then performing a dielectric deposition on the front surface by PECVD. The dielectric deposition comprises: a. growth of a thin silicon oxide; b. PECVD deposition of silicon nitride to achieve a silicon nitride. The silicon is then annealed to drive hydrogen from the silicon nitride layer into the silicon to passivate the silicon.

Abstract: Surface processing in which the area to be processed is restricted to a predetermined pattern, can be achieved by: (a) providing a layer of a first reagent over a region of the surface to be processed which at least covers an area of the predetermined pattern; (b) providing one or more further reagents which are further reagents required for the processing of the surface; and (c) applying at least one of the further reagents over the region to be processed according to the predetermined pattern; such that the first reagent acts with the one or more of the further reagents to process the surface only in the area of the predetermined pattern. The process is particularly applicable to etching where an etchant having two or more components is used. In that case at least a first etchant component is applied over the surface and at least one further etchant component is applied in the predetermined pattern.

Abstract: A method of selective delivery of material to locations on a substrate using a continuous stream deposition device to deposit the material at selected locations on the substrate. This is achieved by creating a mask with an opening, locating the mask over the substrate and depositing the material through the opening onto the substrate. When locating the mask, over the substrate, a portion of the substrate is exposed through the opening and when the continuous stream deposition device is moved relative to the substrate and the mask, the continuous stream deposition device follows a path relative to the mask which intersects the opening. While the continuous stream deposition device moves, it discharges a continuous stream comprising the material to be delivered, to deposit the material through the mask at a discrete location on the substrate, at the intersection of the opening and the path of the continuous stream deposition device.