Patents by Inventor Alison Maree Wenham
Alison Maree Wenham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10211354Abstract: A monolithically integrated system of silicon solar cells. A system having a silicon substrate and a plurality of solar cells formed on the silicon substrate. Each solar cell can have an emitter portion and a base portion. The system can also have a plurality of intermediate regions, each intermediate region having a polarity and electrically separating at least two portions of adjacent solar cells from one another such that the polarity of the intermediate region is opposite to a polarity of at least one of the separated portions of the adjacent solar cells.Type: GrantFiled: February 28, 2014Date of Patent: February 19, 2019Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Catherine Emily Chan, Stuart Ross Wenham, Brett Jason Hallam, Alison Maree Wenham
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Patent number: 10199523Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: GrantFiled: June 25, 2015Date of Patent: February 5, 2019Assignees: NEWSOUTH INNOVATIONS PTY LIMITED, SUNTECH POWER INTERNATIONAL LTD.Inventors: Alison Maree Wenham, Ziv Hameiri, Jing Jia Ji, Ly Mai, Zhengrong Shi, Budi Tjahjono, Stuart Ross Wenham
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Patent number: 9947821Abstract: A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.Type: GrantFiled: July 24, 2014Date of Patent: April 17, 2018Assignee: Newsouth Innovations PTY LimitedInventors: Brett Jason Hallam, Matthew Bruce Edwards, Stuart Ross Wenham, Phillip George Hamer, Catherine Emily Chan, Chee Mun Chong, Pei Hsuan Lu, Ly Mai, Li Hui Song, Adeline Sugianto, Alison Maree Wenham, Guang Qi Xu
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Patent number: 9847443Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.Type: GrantFiled: July 7, 2016Date of Patent: December 19, 2017Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Stuart Ross Wenham, Phillip George Hamer, Brett Jason Hallam, Adeline Sugianto, Catherine Emily Chan, Lihui Song, Pei Hsuan Lu, Alison Maree Wenham, Ly Mai, Chee Mun Chong, GuangQi Xu, Matthew Edwards
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Patent number: 9824897Abstract: A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.Type: GrantFiled: July 24, 2014Date of Patent: November 21, 2017Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Brett Jason Hallam, Matthew Bruce Edwards, Stuart Ross Wenham, Phillip George Hamer, Catherine Emily Chan, Chee Mun Chong, Pei Hsuan Lu, Ly Mai, Li Hui Song, Adeline Sugianto, Alison Maree Wenham, Guang Qi Xu
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Patent number: 9613814Abstract: A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photovoltaic junction. The solar cell includes a surface region or regions of heavily doped material and the contact comprises a contact metallisation formed over the heavily doped regions to make contact thereto. Surface keying features are located in the semiconductor material into which the metallisation extends to assist in attachment of the metallisation to the semiconductor material.Type: GrantFiled: February 24, 2010Date of Patent: April 4, 2017Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Alison Maree Wenham, Martin Andrew Green, Stuart Ross Wenham
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Publication number: 20160372625Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.Type: ApplicationFiled: July 7, 2016Publication date: December 22, 2016Inventors: Stuart Ross Wenham, Phillip George Hamer, Brett Jason Hallam, Adeline Sugianto, Catherine Emily Chan, Lihui Song, Pei Hsuan Lu, Alison Maree Wenham, Ly Mai, Chee Mun Chong, GuangQi Xu, Matthew Edwards
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Patent number: 9412897Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) providing one or more hydrogen sources accessible by each surface of the device; and iii) heating the device, or a local region of the device to at least 40° C.Type: GrantFiled: December 4, 2014Date of Patent: August 9, 2016Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Stuart Ross Wenham, Phillip George Hamer, Brett Jason Hallam, Adeline Sugianto, Catherine Emily Chan, Lihui Song, Pei Hsuan Lu, Alison Maree Wenham, Ly Mai, Chee Mun Chong, GuangQi Xu, Matthew Edwards
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Publication number: 20160225930Abstract: A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.Type: ApplicationFiled: July 24, 2014Publication date: August 4, 2016Inventors: Brett Jason HALLAM, Matthew Bruce EDWARDS, Stuart Ross WENHAM, Phillip George HAMER, Catherine Emily CHAN, Chee Mun CHONG, Pei Hsuan LU, Ly MAI, Li Hui SONG, Adeline SUGIANTO, Alison Maree WENHAM, Guang Qi XU
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Patent number: 9385247Abstract: A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.Type: GrantFiled: May 23, 2014Date of Patent: July 5, 2016Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Valantis Vais, Alison Joan Lennon, Stuart Ross Wenham, Jing Jia Ji, Alison Maree Wenham, Jingnan Tong, Xi Wang
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Patent number: 9269851Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.Type: GrantFiled: November 12, 2012Date of Patent: February 23, 2016Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Valantis Vais, Alison Joan Lennon, Stuart Ross Wenham, Jing Jia Ji, Alison Maree Wenham
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Publication number: 20160013341Abstract: A monolithically integrated system of silicon solar cells. A system having a silicon substrate and a plurality of solar cells formed on the silicon substrate. Each solar cell can have an emitter portion and a base portion. The system can also have a plurality of intermediate regions, each intermediate region having a polarity and electrically separating at least two portions of adjacent solar cells from one another such that the polarity of the intermediate region is opposite to a polarity of at least one of the separated portions of the adjacent solar cells.Type: ApplicationFiled: February 28, 2014Publication date: January 14, 2016Inventors: Catherine Emily Chan, Stuart Ross Wenham, Brett Jason Hallam, Alison Maree Wenham
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Patent number: 9190556Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.Type: GrantFiled: May 20, 2013Date of Patent: November 17, 2015Assignee: NewSouth Innovations Pty LimitedInventors: Stuart Ross Wenham, Phillip George Hamer, Brett Jason Hallam, Adeline Sugianto, Catherine Emily Chan, Lihui Song, Pei Hsuan Lu, Alison Maree Wenham, Ly Mai, Chee Mun Chong, GuangQi Xu, Matthew Edwards
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Publication number: 20150318413Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: ApplicationFiled: June 25, 2015Publication date: November 5, 2015Applicants: Suntech Power International Ltd., NewSouth Innovations Pty LimitedInventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
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Patent number: 9136126Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: GrantFiled: February 11, 2010Date of Patent: September 15, 2015Assignee: NewSouth Innovations Pty LimitedInventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
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Patent number: 9040128Abstract: A method of photoplating a metal contact onto a surface of a cathode of a photovoltaic device is provided using light induced plating technique. The method comprises: a) immersing the photovoltaic device in a solution of metal ions, where the metal ions are a species which is to be plated onto the surface of the cathode of the photovoltaic device; and b) illuminating the photovoltaic device, using a light source of time varying intensity. This results in nett plating which is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode.Type: GrantFiled: November 3, 2010Date of Patent: May 26, 2015Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Ly Mai, Alison Maree Wenham, Stuart Ross Wenham
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Publication number: 20150132881Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.Type: ApplicationFiled: December 4, 2014Publication date: May 14, 2015Inventors: STUART ROSS WENHAM, Phillip George Hamer, Brett Jason Hallam, Adeline Sugianto, Catherine Emily Chan, Lihui Song, Pei Hsuan Lu, Alison Maree Wenham, Ly Mai, Chee Mun Chong, GuangQi Xu, Matthew Edwards
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Publication number: 20150111333Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.Type: ApplicationFiled: May 20, 2013Publication date: April 23, 2015Applicant: NewSouth Innovations Pty LimitedInventors: Stuart Ross Wenham, Phillip George Hamer, Brett Jason Hallam, Adeline Sugianto, Catherine Emily Chan, Lihui Song, Pei Hsuan Lu, Alison Maree Wenham, Ly Mai, Chee Mun Chong, GuangQi Xu, Matthew Edwards
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Publication number: 20140322860Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.Type: ApplicationFiled: November 12, 2012Publication date: October 30, 2014Applicant: NewSouth Innovations Pty LimitedInventors: Valantis Vais, Alison Joan Lennon, Stuart Ross Wenham, Jing Jia Ji, Alison Maree Wenham
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Publication number: 20140251817Abstract: A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidising the exposed surface to form an oxide layer.Type: ApplicationFiled: May 23, 2014Publication date: September 11, 2014Applicant: NewSouth Innovations Pty LimitedInventors: Valantis Vais, Alison Joan Lennon, Stuart Ross Wenham, Jing Jia Ji, Alison Maree Wenham, Jingnan Tong, Xi Wang