Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: The present invention relates to polyimide pastes and methods of preparation. The polyimide pastes are used to prepare dielectric materials, and devices which include at least one layer which contain the polyimide pastes.

Abstract: A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract: A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.

Abstract: An aluminum paste having no or only poor fire-through capability and comprising particulate aluminum, an organic vehicle and at least one glass frit selected from the group consisting of lead-free glass frits containing 0.5 to 15 wt. % SiO2, 0.3 to 10 wt. % Al2O3 and 67 to 75 wt. % Bi2O3, and the use of such aluminum paste in the manufacture of aluminum back anodes of PERC silicon solar cells.

Abstract: Described are aluminum pastes comprising spherical-shaped and nodular-shaped particulate aluminum and an organic vehicle and their use in forming p-type aluminum back electrodes of silicon solar cells.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a p-type silicon wafer having on its front-side an n-type emitter with an ARC layer thereon and on its back-side a perforated dielectric passivation layer with local BSF contacts at the places of the perforations, (2) applying and drying a silver paste to form a silver back electrode pattern connecting the local BSF contacts on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: A process for the production of a LFC-PERC silicon solar cell having an aluminum back electrode wherein an aluminum paste having no or only poor fire-through capability and including particulate aluminum, glass frit, an organic vehicle and 0.01 to <0.05 wt. % of at least one antimony oxide, based on total aluminum paste composition, is used, and wherein the at least one antimony oxide is present in the aluminum paste as separate particulate constituent(s) and/or as glass frit constituent(s).

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

Abstract: A process for the formation of a silver back anode of a silicon solar cell wherein a silver paste comprising particulate silver, an organic vehicle and glass frit comprising at least one antimony oxide is applied in a silver back anode pattern on the back-side of a p-type silicon wafer having an aluminum back-side metallization and fired.

Abstract: A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a silicon nitride antireflective coating on its front-side and being contaminated with silicon nitride on its back-side, and firing the aluminum paste after its application.

Abstract: Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.