Abstract: The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond.

Abstract: The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond.

Abstract: The invention relates to a method (100) for monitoring the growth conditions of a microwave plasma-assisted deposition for diamond manufacture, said method being implemented by a monitoring device (10) comprising at least one digital image capture means (11), one digital image processing module (12), and one data processing module (13), said method including the steps of: capturing (110) a digital color image of at least one growing diamond, using the digital image capturing means (11), extracting (120) color characteristic values from at least one area of the captured digital image, by the digital image processing module (12), and analyzing (130), by the data processing module (13), the extracted color characteristic values to detect a variation during the microwave plasma-assisted deposition.

Abstract: Method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma, in which, in a vacuum chamber, a plasma of finite volume is formed near a substrate by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge, which has a succession of low-power states and of high-power states, and having a peak absorbed power Pc, so as to obtain at least carbon-containing radicals in the plasma and to deposit the said carbon-containing radicals on the substrate in order to form a diamond film thereon. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3, while maintaining the substrate to a substrate temperature of between 700° C. and 1000° C.

Abstract: The invention relates to a treatment method of a diamond surface and to a corresponding diamond surface (5A). According to the method, ions are produced, each having at least three positive charges, and a beam of these ions is sent towards a diamond surface in order to make at least one zone of the surface conductive under the effect of said ions. Advantageously, conductive islands (6) are formed with a diameter smaller than 150 nm, then used preferably as one electron tank (diameter smaller than 10 nm) or as replenishment reservoirs for cold cathodes. Application to micro-electronics and to the production of cold cathodes.

Abstract: The invention relates to a treatment method of a diamond surface and to a corresponding diamond surface (5A).