Abstract: Certain embodiments combine the use of two or more noble metal impurities (e.g., gold, platinum, palladium, iridium, etc.) to suppress the lifetime of power semiconductors such as diodes. The noble metals may be applied using various methods including, for example, the application of thin films from a liquid suspension of the noble metals (e.g., gold and platinum) and/or alloys thereof onto the wafer and/or the coating the wafer with a layer of the noble metals (e.g., gold and platinum) from high vacuum metal deposition by electron beam or sputtering. The application and drive of the impurities may be simultaneous or sequential.