Abstract: A method for displaying digital content in an interactive navigation interface is provided. The method includes: displaying a plurality of top-level category groups on a display screen; receiving a user pointing operation selecting one of the top-level category groups from a remote controller; providing visual feedback for the selected top-level category group; and in response to a zoom-in operation on the selected top-level category group received from the remote controller, displaying a plurality of digital content objects within the selected top-level category group.

Abstract: A method for displaying digital content in an interactive navigation interface is provided. The method includes: displaying a plurality of top-level category groups on a display screen; receiving a user pointing operation selecting one of the top-level category groups from a remote controller; providing visual feedback for the selected top-level category group; and in response to a zoom-in operation on the selected top-level category group received from the remote controller, displaying a plurality of digital content objects within the selected top-level category group.

Abstract: Various embodiments provide complementary metal-oxide-semiconductor (CMOS) devices and their fabrication methods. A semiconductor substrate is provided to include a first region to form a PMOS transistor and a second region to form an NMOS transistor. One of the first and second regions can include a metal gate structure having a metal top layer. The other of the first and second regions can include an interfacial oxide layer formed on a high-k dielectric layer. A surface of the metal top layer can be oxidized to form a metal oxide top layer covering the metal top layer. The metal oxide top layer and the interfacial oxide layer can be removed by wet etching. A metal gate can be formed on the high-k dielectric layer.

Abstract: A method for fabricating a semiconductor device comprises providing a substrate having a core oxide layer and an I/O oxide layer formed thereon. The I/O oxide layer has an I/O mask layer formed thereon. The method also includes forming an I/O dummy gate on the I/O mask layer and a core dummy gate on the core oxide layer, forming an etch barrier layer on the substrate covering the dummy gates, forming a dielectric layer on the etch barrier layer, and planarizing the etch barrier layer and the dielectric layer to expose the top surface of the dummy gates. The method further includes simultaneously removing the I/O and core dummy gates to form I/O and core gate grooves, removing the core oxide layer, removing the I/O mask layer, depositing a dielectric layer in the core gate groove, and forming a metal gate layer filling the I/O and core gate grooves.

Abstract: A method for fabricating a semiconductor device comprises providing a substrate having a core oxide layer and an I/O oxide layer formed thereon. The I/O oxide layer has an I/O mask layer formed thereon. The method also includes forming an I/O dummy gate on the I/O mask layer and a core dummy gate on the core oxide layer, forming an etch barrier layer on the substrate covering the dummy gates, forming a dielectric layer on the etch barrier layer, and planarizing the etch barrier layer and the dielectric layer to expose the top surface of the dummy gates. The method further includes simultaneously removing the I/O and core dummy gates to form I/O and core gate grooves, removing the core oxide layer, removing the I/O mask layer, depositing a dielectric layer in the core gate groove, and forming a metal gate layer filling the I/O and core gate grooves.

Abstract: Various embodiments provide complementary metal-oxide-semiconductor (CMOS) devices and their fabrication methods. A semiconductor substrate is provided to include a first region to form a PMOS transistor and a second region to form an NMOS transistor. One of the first and second regions can include a metal gate structure having a metal top layer. The other of the first and second regions can include an interfacial oxide layer formed on a high-k dielectric layer. A surface of the metal top layer can be oxidized to form a metal oxide top layer covering the metal top layer. The metal oxide top layer and the interfacial oxide layer can be removed by wet etching. A metal gate can be formed on the high-k dielectric layer.