Patents by Inventor Allan MacDonald
Allan MacDonald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220346612Abstract: A cleaner head including suction chamber having a suction opening; an agitator including a hollow body and supported the suction chamber by a support member, the support member having a first end that is fixed to a side wall of the suction chamber,and second end that free and over which the hollow body of the agitator can be slideably received; and a drive assembly forming part of the support member, and arranged to rotate the agitator about an axis. The fixed end of the support member is pivotal fixed to the side all of the suctionchamber such that the free end of the support member, together with the agitator supported thereon, can be pivoted to protrude out frome suction opening, to allow the agitator o be removed and replaced.Type: ApplicationFiled: October 2, 2019Publication date: November 3, 2022Applicant: Dyson Technology LimitedInventors: Edward Richard OLDFIELD, Giles SMITH, Nichola Lauren CLIFTON, Frederick Michael THORNTON, James Robert Allan MACDONALD, Robert Michael COX
-
Patent number: 9825218Abstract: A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits.Type: GrantFiled: October 13, 2015Date of Patent: November 21, 2017Assignee: Board of Regents, The University of Texas SystemInventors: Allan MacDonald, Leonard Franklin Register, II, Emanuel Tutuc, Inti Sodemann, Hua Chen, Xuehao Mou, Sanjay K. Banerjee
-
Publication number: 20170104151Abstract: A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits.Type: ApplicationFiled: October 13, 2015Publication date: April 13, 2017Inventors: Sanjay K. Banerjee, Allan MacDonald, Leonard Franklin Register, II, Emanuel Tutuc, Inti Sodemann, Hua Chen, Xuehao Mou
-
Patent number: 9004858Abstract: An annular nozzle for a ceiling fan includes an inner wall defining a bore having a bore axis, an outer wall extending about the inner wall, an air inlet for receiving an air flow, and an air outlet section extending between the inner wall and the outer wall. The air outlet section defines an air outlet for emitting the air flow. An interior passage extends about the bore axis for conveying the air flow to the air outlet. The air outlet section is configured to emit the air flow away from the bore axis.Type: GrantFiled: December 15, 2011Date of Patent: April 14, 2015Assignee: Dyson Technology LimitedInventors: Frederic Nicolas, Alan Howard Davis, James Robert Allan MacDonald
-
Patent number: 8629427Abstract: A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.Type: GrantFiled: April 29, 2011Date of Patent: January 14, 2014Assignee: Texas A&M UniversityInventors: Sanjay K. Banerjee, Leonard Franklin Register, II, Allan MacDonald, Bhagawan R. Sahu, Priyamvada Jadaun, Jiwon Chang
-
Publication number: 20120273763Abstract: A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.Type: ApplicationFiled: April 29, 2011Publication date: November 1, 2012Inventors: Sanjay K. Banerjee, Leonard Franklin Register, II, Allan MacDonald, Bhagawan R. Sahu, Priyamvada Jadaun, Jiwon Chang
-
Patent number: 8263967Abstract: A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer. These conduction layers may be composed of graphene. The voltages applied to the first and/or second gates can control the peak current and associated voltage value for current flow between top and bottom conduction channels, and interlayer current voltage characteristic exhibiting negative differential resistance. BiSFETs may be used to make a variety of logic gates. A clocked power supply scheme may be used to facilitate BiSFET-based logic.Type: GrantFiled: May 1, 2012Date of Patent: September 11, 2012Assignee: Board of Regents, The University of Texas SystemsInventors: Sanjay K. Banerjee, Leonard Franklin Register, II, Allan MacDonald, Dharmendar Reddy Palle, Emanuel Tutuc
-
Publication number: 20120212257Abstract: A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer. These conduction layers may be composed of graphene. The voltages applied to the first and/or second gates can control the peak current and associated voltage value for current flow between top and bottom conduction channels, and interlayer current voltage characteristic exhibiting negative differential resistance. BiSFETs may be used to make a variety of logic gates. A clocked power supply scheme may be used to facilitate BiSFET-based logic.Type: ApplicationFiled: May 1, 2012Publication date: August 23, 2012Inventors: Sanjay K. Banerjee, Leonard Franklin Register, II, Allan MacDonald, Dharmendar Reddy Palle, Emanuel Tutuc
-
Publication number: 20120163977Abstract: An annular nozzle for a ceiling fan includes an inner wall defining a bore having a bore axis, an outer wall extending about the inner wall, an air inlet for receiving an air flow, and an air outlet section extending between the inner wall and the outer wall. The air outlet section defines an air outlet for emitting the air flow. An interior passage extends about the bore axis for conveying the air flow to the air outlet. The air outlet section is configured to emit the air flow away from the bore axis.Type: ApplicationFiled: December 15, 2011Publication date: June 28, 2012Applicant: Dyson Technology LimitedInventors: Frederic NICOLAS, Alan Howard DAVIS, James Robert Allan MACDONALD
-
Patent number: 8188460Abstract: A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer. These conduction layers may be composed of graphene. The voltages applied to the first and/or second gates can control the peak current and associated voltage value for current flow between top and bottom conduction channels, and interlayer current voltage characteristic exhibiting negative differential resistance. BiSFETs may be used to make a variety of logic gates. A clocked power supply scheme may be used to facilitate BiSFET-based logic.Type: GrantFiled: November 24, 2009Date of Patent: May 29, 2012Assignee: Board of Regents, The University of Texas SystemInventors: Sanjay K. Banerjee, Leonard Franklin Register, II, Allan MacDonald, Dharmendar Reddy Palle, Emanuel Tutuc
-
Publication number: 20100127243Abstract: A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer. These conduction layers may be composed of graphene. The voltages applied to the first and/or second gates can control the peak current and associated voltage value for current flow between top and bottom conduction channels, and interlayer current voltage characteristic exhibiting negative differential resistance. BiSFETs may be used to make a variety of logic gates. A clocked power supply scheme may be used to facilitate BiSFET-based logic.Type: ApplicationFiled: November 24, 2009Publication date: May 27, 2010Applicant: The Board of Regents The University of Texas SystemInventors: Sanjay K. Banerjee, Leonard Franklin Register, II, Allan MacDonald, Dharmendar Reddy Palle, Emmanuel Tutuc
-
Publication number: 20070119682Abstract: The electronic parking meter includes a microcontroller, an input interface, an output interface, communications devices and a power supply. The microcontroller receives instructions through the input interface from a user wishing to purchase parking time, controls the output interface to provide parking related messages or indications, and controls the electronic parking meter's communications with other devices through the communications devices for transmitting and receiving information and data. The power supply, which converts a battery pack voltage up to the operating voltage, may include an isolation transformer and a flyback switcher. The parking meter is maintained in a sleep mode as a default state, is placed in a schedule wake-up mode at a predetermined frequency for a predetermined short period of time to carry-out maintenance functions, and is only placed in an event wake-up mode for the time required to process major events, such as coin chute, card reader or communications port interrupts.Type: ApplicationFiled: January 30, 2007Publication date: May 31, 2007Inventors: Ken Banks, Edsall Rob, Allan MacDonald, George Mackay
-
Publication number: 20050155839Abstract: The electronic parking meter includes a microcontroller, an input interface, an output interface, communications devices and a power supply. The microcontroller receives instructions through the input interface from a user wishing to purchase parking time, controls the output interface to provide parking related messages or indications, and controls the electronic parking meter's communications with other devices through the communications devices for transmitting and receiving information and data. The power supply, which converts a battery pack voltage up to the operating voltage, may include an isolation transformer and a flyback switcher. The parking meter is maintained in a sleep mode as a default state, is placed in a schedule wake-up mode at a predetermined frequency for a predetermined short period of time to carry-out maintenance functions, and is only placed in an event wake-up mode for the time required to process major events, such as coin chute, card reader or communications port interrupts.Type: ApplicationFiled: May 13, 2004Publication date: July 21, 2005Inventors: Ken Banks, Rob Edsall, Allan MacDonald, George MacKay