Patents by Inventor Allan Robert Northrup

Allan Robert Northrup has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140000673
    Abstract: A photovoltaic device is presented. The device includes a first semiconductor layer disposed on a second semiconductor layer. The first semiconductor layer includes a compound having a metal species, sulfur, and oxygen. The metal species may include zinc, magnesium, tin, indium, or a combination thereof. Method for making a photovoltaic device is also presented.
    Type: Application
    Filed: June 29, 2012
    Publication date: January 2, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Jinbo Cao, Bastiaan Arie Korevaar, Hongying Peng, Allan Robert Northrup
  • Patent number: 8476105
    Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: July 2, 2013
    Assignee: General Electric Company
    Inventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang
  • Publication number: 20130133731
    Abstract: Methods for forming a resistive transparent buffer layer on a substrate are provided. The method can include depositing a resistive transparent buffer layer on a transparent conductive oxide layer on a substrate. The resistive transparent buffer layer can comprise a cadmium doped tin oxide that has an as-deposited stoichiometry where cadmium is present in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. Zinc may also be provided in the resistive transparent buffer layer in certain embodiments. Additionally, thin film photovoltaic devices having such resistive transparent buffer layers are provided.
    Type: Application
    Filed: November 29, 2011
    Publication date: May 30, 2013
    Applicant: PRIMESTAR SOLAR, INC.
    Inventors: Scott Daniel Feldman-Peabody, Robert Dwayne Gossman, George Theodore Dalakos, Anping Zhang, Allan Robert Northrup, Hong Piao, Laurie Le Tarte
  • Publication number: 20120164785
    Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 28, 2012
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang