Abstract: A semiconductor processing chamber performs various wafer processing operations that involve at least one of pumping the chamber to high vacuum states and regulating a vacuum (e.g., during introduction of process gases, as gas infiltrates the chamber, as reactions emit gases, as a wafer off-gases, etc.). A vacuum valve may be fluidically coupled between a vacuum pumping system and at least a portion of the semiconductor processing chamber. The vacuum valve may be a high-conductance multi-stage poppet valve enabling a relatively high gas flow rate and/or low pressure drop. In an open state, the multi-stage design of the poppet valve may have larger cross-sectional openings, in aggregate, than a comparable single-stage poppet valve could achieve, thereby increasing conductance.

Abstract: A system comprises a process module, a pump, and an adapter plate. The process module processes a semiconductor substrate, has an opening at a lower end, and includes a poppet valve above the opening. The pump operates in conjunction with the poppet valve to evacuate gases from the process module. The adapter plate is arranged above the pump and below the opening at the lower end of the process module. The adapter plate includes an inner cavity coincident with the opening and an outer perimeter smaller than the lower end of the process module. The adapter plate includes a first set of bores arranged around the inner cavity and a second set of bores arranged along the outer perimeter. First fasteners fasten the pump to the adapter plate through the first set of bores. Second fasteners fasten the adapter plate to the process module through the second set of bores.

Abstract: A thermal management system for a substrate processing tool located in a fabrication room includes a blower that draws air from the fabrication room and causes the air to flow through a process module of the substrate processing tool. Heat is transferred from the process module to the air and the air is exhausted from the process module. A heat exchanger receives the air exhausted from the process module, cools the air, and provides the cooled air to at least one of the fabrication room, a subfloor of the fabrication room, and the process module.

Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

Abstract: A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel.

Abstract: An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing portion having compressibility sufficient to yield under fluid cleaning surges attributable to initiation and termination of cleaning fluid flow through the injector cleaning apparatus along with resiliency sufficient to prevent abutment of the gas injector and a rigid facing portion of the input-side injector engaging interface and output-side injector engaging interface respectively.

Abstract: An automated hydrogen bubble detection apparatus includes a horizontal support surface on which a test coupon can be supported, a transparent tube having an open top and an open bottom and operable to contain a test solution when positioned on a test coupon, a camera arranged to view a test solution in the transparent tube, and a controller in communication with the camera and effective to operate the camera such that at least one video segment is recorded by the camera and analyzed to detect first bubble and continuous bubble generation. A method of evaluating corrosion resistance of coatings on aluminum and steel in acidic solution is also included.

Abstract: A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel.

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract: A linear actuator comprised of an actuator body having a first portion and a second portion, each arranged along a longitudinal axis of the actuator body. A vacuum bellows is concentrically located in the first portion and is configured to seal a vacuum environment from the second portion. A linear motion shaft is concentrically located substantially within the actuator body and is configured to move in a linear direction along the longitudinal axis. An electrically conductive portion of the shaft is concentrically located substantially within the vacuum bellows and electrically insulated therefrom and is configured to receive and conduct a signal. A lift force generating portion of the shaft is concentrically located substantially within the second portion. An electrical contact pad is electrically coupled to the conductive portion of the shaft and is configured to couple the signal to another surface upon activation of the shaft.

Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

Abstract: An automated hydrogen bubble detection apparatus includes a horizontal support surface on which a test coupon can be supported, a transparent tube having an open top and an open bottom and operable to contain a test solution when positioned on a test coupon, a camera arranged to view a test solution in the transparent tube, and a controller in communication with the camera and effective to operate the camera such that at least one video segment is recorded by the camera and analyzed to detect first bubble and continuous bubble generation. A method of evaluating corrosion resistance of coatings on aluminum and steel in acidic solution is also included.

Abstract: A linear actuator comprised of an actuator body having a first portion and a second portion, each arranged along a longitudinal axis of the actuator body. A vacuum bellows is concentrically located in the first portion and is configured to seal a vacuum environment from the second portion. A linear motion shaft is concentrically located substantially within the actuator body and is configured to move in a linear direction along the longitudinal axis. An electrically conductive portion of the shaft is concentrically located substantially within the vacuum bellows and electrically insulated therefrom and is configured to receive and conduct a signal. A lift force generating portion of the shaft is concentrically located substantially within the second portion. An electrical contact pad is electrically coupled to the conductive portion of the shaft and is configured to couple the signal to another surface upon activation of the shaft.