Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A digital picture frame device and system for displaying digital content. The digital picture frame device includes a display screen, a frame surrounding a periphery of the display screen, a compartment accessible by an opening in a side surface of the frame, a movable door for selectively covering the opening, a memory device port disposed in the compartment for receiving a memory device containing digital content, and control circuitry for controlling a display of the digital content on the display screen. A computer with a processor and a computer-readable medium having computer-executable instructions thereon can generate or receive digital content and associate at least some of the digital content with one or more playlists. A communications link transfers the playlists of the digital content to the picture frame for display on the display screen. Multiple inputs can be used for receiving and displaying different kinds of digital content.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A digital picture frame device and system are described. The system includes a server, a computer, and a digital picture frame device. The system also includes a first communications link for transmitting digital content from the server to the computer and a second communications link for transmitting digital content from the computer to the digital picture frame. The digital picture frame device includes a display screen, a frame, an input, memory and control circuitry. The system includes encrypted digital content on the server, decryption circuitry on the computer for decrypting the content from the server, and circuitry in the digital picture frame for displaying the decrypted digital content on the frame.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: Device and method for measuring complex reflectance using a light source for generating a light beam with known polarization state, a lens for focusing the beam onto a sample surface such that various rays within the focused beam create a spread of angles of incidence ?, a waveplate for retarding one polarization state of the beam, a polarizer for generating interference between beam polarization states, and a detector with a two dimensional array of detector elements for generating intensity signals in response to the beam, wherein each detector element corresponds to a unique angle of incidence ? and azimuthal angle ? of the reflected beam. A processor calculates magnitude and phase values for the reflected beam by using the intensity signals corresponding to at least one incident angle ? and a plurality of azimuthal angles ? within the at least one incident angle ? sufficient to enable a meaningful Fourier analysis thereof.

Abstract: An inspection system and method for inspecting a sample surface, with a light source for generating a probe beam of light, a high NA lens for focusing the probe beam onto a sample surface, and collecting a scattered probe beam from the sample surface, optics for imaging the scattered probe beam onto a detector having a plurality of detector elements that generate output signals in response to the scattered probe beam, and a processor for analyzing the output signals to identify defects on the sample surface. Shaping the beam into a stripe shape increases intensity without sacrificing throughput. Offsetting the beam from the center of the high NA lens provides higher angle illumination. Crossed polarizers also improve signal quality. A homodyne or heterodyne reference beam (possibly using a frequency altering optical element) can be used to create an interferometric signal at the detector for improved signal to noise ratios.

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.

Abstract: A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure.

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure.

Abstract: Device and method for measuring complex reflectance using a light source for generating a light beam with known polarization state, a lens for focusing the beam onto a sample surface such that various rays within the focused beam create a spread of angles of incidence ?, a waveplate for retarding one polarization state of the beam, a polarizer for generating interference between beam polarization states, and a detector with a two dimensional array of detector elements for generating intensity signals in response to the beam, wherein each detector element corresponds to a unique angle of incidence ? and azimuthal angle ? of the reflected beam. A processor calculates magnitude and phase values for the reflected beam by using the intensity signals corresponding to at least one incident angle ? and a plurality of azimuthal angles ? within the at least one incident angle ? sufficient to enable a meaningful Fourier analysis thereof.

Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.

Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.

Abstract: An optical measurement system, including a reference ellipsometer and a non-contact optical measurement device, evaluates a sample having at least a partially known composition. The reference ellipsometer includes a light generator to generate a beam of quasi-monochromatic light of known wavelength and polarization, directed at a non-normal angle of incidence to interact with the sample. An analyzer creates interference between S and P polarized components of the reflected beam, the intensity of which is measured by a detector. A processor determines the polarization state using the detected intensity, and determines an optical property of the sample based upon the determined polarization state, the known wavelength, and the composition. The processor calibrates the optical measurement device, used to measure an optical parameter of the sample, by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.