Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: In one aspect of the present invention, a non-volatile latching element is provided that includes one or more magnetic elements therein. By programming the magnetic elements to appropriate resistance values, the latching element assumes a pre-programmed state upon power up. The magnetic elements are preferably programmed using either a one or two layer word line. In another aspect of the present invention, the magnetic elements are formed as pseudo-spin valve structures utilizing only CoFe as the active ferromagnetic layers, with one ferromagnetic layer thinner than the other. This simplifies the design while maintaining the high moment material to achieve large GMR ratios.

Abstract: In one aspect of the present invention, a non-volatile latching element is provided that includes one or more magnetic elements therein. By programming the magnetic elements to appropriate resistance values, the latching element assumes a pre-programmed state upon power up. The magnetic elements are preferably programmed using either a one or two layer word line. In another aspect of the present invention, the magnetic elements are formed as pseudo-spin valve structures utilizing only CoFe as the active ferromagnetic layers, with one ferromagnetic layer thinner than the other. This simplifies the design while maintaining the high moment material to achieve large GMR ratios.

Abstract: A high density magnetic memory device and method of manufacture therefor, wherein the magnetic bit region is provided after selected higher temperature processing steps are performed. Illustrative higher temperature processing steps include those that are performed above for example 400.degree. C., any may include contact and via plug processing. The present invention may allow, for example, contact and via plug processing to be used to form magnetic RAM devices. As indicated above, contact and/or via plug processing typically allows the size of the contacts and vias to be reduced, and the packing density of the resulting memory device to be increased.

Abstract: A method for performing an elevated temperature process on an integrated device whereby a magnetic field is used to maintain the alignment of magnetic domains in magnetically sensitive materials.

Abstract: A magnetoresistive memory array which has a row of active sense lines with each sense line including magnetoresistive bits and word lines extending over the bits. Each active sense line ending in a termination bit having a configuration selected to cause an adjacent bit to experience a magnetic field similar to that experienced by the remaining bits in the sense line. An inactive sense line located at each end of the row of active sense lines.

Abstract: A word line structure, and method of manufacture therefor, for a monolithically formed magnetoresistive memory device having a magnetic field sensitive bit region. In a preferred embodiment, the word line structure includes a dielectric layer having an etched cavity formed therein, wherein the cavity has a bottom surface and two spaced side surfaces. A magnetic field keeper is provided adjacent to the back and/or side surfaces of the cavity. A conductive word line is also provided in the cavity and adjacent to the magnetic field keeper to at least substantially fill the cavity. A polishing step may be used to remove any portion of the magnetic field keeper and/or conductive word line that lie above the top surface of the dielectric layer to provide a planer top surface.

Abstract: A package for shielding a circuit containing magnetically sensitive materials from external magnetic fields. A shield attached to a base of the package is connected by vias to a first conductive plane. A shield attached to a lid of the package is connected by vias to a second conductive plane. The first shield and the second shield are electrically interconnected. Conductive leads extend from the package and are connected internally to the circuit.

Abstract: Magnetoresistive random access memory bit edges are magnetically hardened to prevent bit edge reversal.

Abstract: In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges.

Abstract: A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.

Abstract: A method for storing selected magnetic states in magnetic bit structures so as to assure establishment of the desired state therein. A first word line current, used for storing a magnetic state, is followed by providing a second word line current. The second line current assures establishment of the desired state in the magnetic bit structure by overcoming any pinning of a magnetic wall.

Abstract: A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.