Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Abstract: Photovoltaic devices, and methods of making the same, are described.

Abstract: A cable breakaway device for use with a power cable connector and a power cable, the power cable connector comprising a sheath and a bearing surface. The cable breakaway device comprising a body with an elongate channel passing therethrough, one or more sharp protrusions radially extending from the body to cut the sheath as the cable is pulled through the channel, allowing the bearing surface to engage the breakaway device without impeding the movement of the connecting device.

Abstract: The invention relates to a fitting provided on the end of a pressurized hose or pipe. The invention provides a fitting having a spigot and a ferrule part in which opposing recess and projecting parts are provided to engage each other and prevent the two parts unwinding from each other.

Abstract: A cable breakaway device for use with a power cable connector and a power cable, the power cable connector comprising a sheath and a bearing surface. The cable breakaway device comprising a body with an elongate channel passing therethrough, one or more sharp protrusions radially extending from the body to cut the sheath as the cable is pulled through the channel, allowing the bearing surface to engage the breakaway device without impeding the movement of the connecting device.

Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Abstract: A computer-implemented system for nearfield gunshot and explosion detection comprising a hardware device with a differential air pressure sensor, a pressure amplifier that amplifies pressure signals generated by the differential air pressure sensor, a microphone, a microphone amplifier that amplifies audio signals generated by the microphone, and a pulse counter that calculates a total event length. The system includes a digital processor that processes the amplified signals from the differential air pressure sensor and the microphone and a data radio that generates alerts based on input from the differential air pressure sensor and the microphone. The system determines whether a gunshot event or an explosive event has occurred based on a pressure length sensitivity setting, a microphone length sensitivity setting, and a correlation sensitivity setting.

Abstract: An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer is on the silicon carbide layer, and an organic protective layer is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.

Abstract: A computer-implemented system for nearfield gunshot and explosion detection comprising a hardware device with a differential air pressure sensor, a pressure amplifier that amplifies pressure signals generated by the differential air pressure sensor, a microphone, a microphone amplifier that amplifies audio signals generated by the microphone, and a pulse counter that calculates a total event length. The system includes a digital processor that processes the amplified signals from the differential air pressure sensor and the microphone and a data radio that generates alerts based on input from the differential air pressure sensor and the microphone. The system determines whether a gunshot event or an explosive event has occurred based on a pressure length sensitivity setting, a microphone length sensitivity setting, and a correlation sensitivity setting.

Abstract: A semiconductor device structure is disclosed that includes a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and the Group III nitrides. An interconnect structure is made to the semiconductor portion, and the interconnect structure includes at least two diffusion barrier layers alternating with two respective high electrical conductivity layers. The diffusion barrier layers have a coefficient of thermal expansion different from and lower than the coefficient of thermal expansion of the high electrical conductivity layers. The difference in the respective coefficients of thermal expansions are large enough to constrain the expansion of the high conductivity layers but less than a difference that would create a strain between adjacent layers that would exceed the bond strength between the layers.

Abstract: Described herein is a centrifuge separator for separating a mixture of an immiscible solid and liquid, particularly where the solid has a lower specific gravity (i.e. is lighter) than the liquid. Methods of use and a rotary seal are also described herein.

Abstract: A cable termination system and method of assembly is provided that clamps strength members of the cable after they have been wrapped around a winding member. The clamping force required is therefore reduced by the capstan effect of the winding member. The winding member is preferably a torus that encircles the cable, and the system may comprise a number of progressively larger tori arranged in sequence along the cable to provide sufficient room for wrapping all of the strength members around them.

Abstract: An armoured cable termination system and method of assembly is provided that clamps the armour wires of the cable over and around the back of a conical inner armour clamp member. The wires are also retained between the inner clamp member and an outer body and a securing end plate. The armour wires are splayed by the inner clamp member, which is forced onto the cable to displace the armour wires. The forcing mechanism is used to support an armour wire former that bends the armour wires around the back of the inner clamp member. The top clamp is then forced onto the termination assembly, such that the armour wires adopt a smooth curve around the back of the inner clamp and are securely clamped along their length. The assembly may then be mounted to a flexible pulling head for pulling it into contact with a structure.

Abstract: A semiconductor device structure is disclosed that includes a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and the Group III nitrides. An interconnect structure is made to the semiconductor portion, and the interconnect structure includes at least two diffusion barrier layers alternating with two respective high electrical conductivity layers. The diffusion barrier layers have a coefficient of thermal expansion different from and lower than the coefficient of thermal expansion of the high electrical conductivity layers. The difference in the respective coefficients of thermal expansions are large enough to constrain the expansion of the high conductivity layers but less than a difference that would create a strain between adjacent layers that would exceed the bond strength between the layers.

Abstract: Embodiments of a method and apparatus are described which provide a photovoltaic module in which light is diverted away from inactive areas of the photovoltaic module to active areas which generate electrical charges. A front support structure of a module is configured to redirect incident light to the active areas.

Abstract: A MESFET includes a silicon carbide layer, spaced apart source and drain regions in the silicon carbide layer, a channel region positioned within the silicon carbide layer between the source and drain regions and doped with implanted dopants, and a gate contact on the silicon carbide layer. Methods of forming a MESFET include providing a layer of silicon carbide, forming spaced apart source and drain regions in the silicon carbide layer, implanting impurity atoms to form a channel region between the source and drain regions, annealing the implanted impurity atoms, and forming a gate contact on the silicon carbide layer.

Abstract: A cable termination system and method of assembly is provided that clamps strength members of the cable after they have been wrapped around a winding member. The clamping force required is therefore reduced by the capstan effect of the winding member. The winding member is preferably a torus that encircles the cable, and the system may comprise a number of progressively larger tori arranged in sequence along the cable to provide sufficient room for wrapping all of the strength members around them.

Abstract: To provide additional charge storage for an electric vehicle, an additional battery (100) is connected in parallel with a regenerative braking direct charged battery (22) through a current limiting or clamping circuit (104 or 120). The additional battery (100) is charged by an external charger such as a plug-in charger or a solar panel that supply minimal current to prevent generation of battery heat. Current flows from the additional battery (100) to the regenerative braking charged batteries (22) so that both batteries can be charged. However, when excessive charge is drawn to drive the vehicle electric motor (20), the current limiting or clamping circuit (104 or 120) serves to prevent the discharge of additional battery (100) from creating excessive heat in the additional battery (100).

Abstract: Fabrication of a Schottky diodes may include providing a Schottky contact layer containing a low barrier metal layer with spaced apart high barrier metal islands therein on a first surface of a substrate. A diode contact is formed on a second surface of the substrate that is opposite to the first surface. Formation of the Schottky contact layer may include providing a liquid mixture of a high barrier metal and a low barrier metal on the first surface of the substrate. Temperature and/or relative concentrations of the high and low barrier metals in the liquid mixture may be controlled to cause regions of the high barrier metal to solidify within the liquid mixture and agglomerate to form the spaced apart high barrier metal islands while inhibiting solidification of the low barrier metal. The temperature and relative concentrations may then be controlled to cause the low barrier metal to solidify and form the low barrier metal layer containing the high barrier metal islands.

Abstract: A unit cell of a metal-semiconductor field-effect transistor (MESFET) includes a semi-insulating substrate having a surface, an implanted n-type channel region in the substrate, and implanted source and drain regions extending from the surface of the substrate into the implanted channel region. A gate contact is between the source and the drain regions, and an implanted p-type region is beneath the source region. The implanted p-type region has an end that extends towards the drain region, is spaced apart vertically from the implanted channel layer, and is electrically coupled to the source region. Methods of forming transistors including implanted channels and implanted p-type regions beneath the source region are also disclosed.