Abstract: A sealed speaker enclosure for a bass speaker that is hand-insertable and removable from a hard-side motorcycle saddlebag. The body of the enclosure complements the interior space of the saddlebag making sealing contact with the interior walls of the saddlebag. The bass speaker faces the motorcycle side of the saddlebag within the shock absorber tower indentation overlapping and opening. A speaker grill overlays the opening in the shock absorber tower indentation of the saddlebag.

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: Embodiments disclosed herein include to a component support for use in coating chamber components via chemical vapor deposition (CVD). The component support includes contact rods configured to contact chamber components at fixture points located on the backside of the chamber components. The component supports are configured to support the chamber components in the processing volume with minimal contact of the chamber components. The fixture points on the backside reduce exposure of the fixture points to reactant gases when the chamber components are installed.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a susceptor ledge on an outer circumferential edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in a processing chamber, and a coating layer deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of venting groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite the front side is textured with a second pattern.

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: Embodiments of the invention are directed to utilizing an extension to software defined networking (SDN) to manage storage area networks (SANs) by receiving, at a switch configured with and managed by a SDN architecture, at least one table. The at least one table being operable in the SDN architecture and including routing information. The switch routes traffic over a SAN using the routing information in the at least one table.

Abstract: A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

Abstract: A sealed speaker enclosure for a bass speaker that is hand-insertable and removable from a hard-side motorcycle saddlebag. The body of the enclosure complements the interior space of the saddlebag making sealing contact with the interior walls of the saddlebag. The bass speaker faces the motorcycle side of the saddlebag within the shock absorber tower indentation overlapping and opening. A speaker grill overlays the opening in the shock absorber tower indentation of the saddlebag.

Abstract: Systems and apparatus for a reduced mass substrate support are disclosed, according to certain embodiments. A front side pocket is provided for support of a substrate, while a backside pocket is provided that reduces the mass of the substrate support. By providing the backside pocket, the mass of the overall substrate support is reduced, providing faster thermal cycling times for the substrate support and reducing the weight of the substrate support for transport. Lift pin systems, according to disclosed embodiments, are compatible with existing pedestal systems by providing a hollow extension from each lift pin hole that extends from a bottom of the backside pocket to provide support for lift pin insertion and operation.

Abstract: Embodiments of the invention are directed to utilizing an extension to software defined networking (SDN) to manage storage area networks (SANs) by receiving, at a switch configured with and managed by a SDN architecture, at least one table. The at least one table being operable in the SDN architecture and including routing information. The switch routes traffic over a SAN using the routing information in the at least one table.

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: Embodiments of the invention are directed to utilizing an extension to software defined networking (SDN) to manage storage area networks (SANs) by receiving, at a switch configured with and managed by a SDN architecture, at least one table. The at least one table being operable in the SDN architecture and including routing information. The switch routes traffic over a SAN using the routing information in the at least one table.

Abstract: A combustion air blower includes a blower housing, an impeller fan within the blower housing, and an embossment to restrict airflow from the combustion air blower. The blower housing has a discharge conduit defining a discharge passageway. The discharge conduit is adapted and configured to receive a baffle such that, when the baffle is received, the baffle extends inwardly into the discharge passageway from a first wall towards a second wall opposite the first wall. The baffle restricts airflow within the discharge passageway. The embossment is in the discharge passageway and in the second wall and extends towards the first wall such that the embossment restricts airflow within the discharge passageway. The embossment cooperates with a baffle to provide a reduced cross sectional area of the discharge passageway in comparison to an upstream portion.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

Abstract: A combustion air blower includes a blower housing, an impeller fan within the blower housing, and an embossment to restrict airflow from the combustion air blower. The blower housing has a discharge conduit defining a discharge passageway. The discharge conduit is adapted and configured to receive a baffle such that, when the baffle is received, the baffle extends inwardly into the discharge passageway from a first wall towards a second wall opposite the first wall. The baffle restricts airflow within the discharge passageway. The embossment is in the discharge passageway and in the second wall and extends towards the first wall such that the embossment restricts airflow within the discharge passageway. The embossment cooperates with a baffle to provide a reduced cross sectional area of the discharge passageway in comparison to an upstream portion.

Abstract: Ureteral catheters and assemblies are provided including: a drainage lumen including a proximal portion configured to be positioned in at least a portion of a patient's urethra and a distal portion configured to be positioned in a patient's ureter and/or kidney, the distal portion including a coiled retention portion including at least a first coil having a first diameter and a second coil having a second diameter, the first diameter being less than the second diameter; or wherein the retention portion extends radially outwardly from a portion of the distal end of the drainage lumen portion, the retention portion including a proximal end having a first diameter, a distal end having a second diameter, and a wall and/or surface extending therebetween, the retention portion having a second diameter is greater than the first diameter when deployed; or wherein the retention portion includes a plurality of drainage tubes.

Abstract: Ureteral catheters and assemblies are provided including: a drainage lumen including a proximal portion configured to be positioned in at least a portion of a patient's urethra and a distal portion configured to be positioned in a patient's ureter and/or kidney, the distal portion including a coiled retention portion including at least a first coil having a first diameter and a second coil having a second diameter, the first diameter being less than the second diameter; or wherein the retention portion extends radially outwardly from a portion of the distal end of the drainage lumen portion, the retention portion including a proximal end having a first diameter, a distal end having a second diameter, and a wall and/or surface extending therebetween, the retention portion having a second diameter is greater than the first diameter when deployed; or wherein the retention portion includes a plurality of drainage tubes.