Abstract: A method of dispatching a service call for an electromechanical device, such as a document production device, is disclosed. The method includes receiving, by a dispatching server, a communication requesting service on a first document production device. The communication includes a unique identifier corresponding to the first device. A data server stores operational history data for a multiple document production devices, and the dispatching server accesses the operational history data in the data server to retrieve service data for the first device. The dispatching service sends a service order message to a customer service representative mobile communication device. The service order message includes a location identifier for the first device, operator contact information for the first device, and the service data.

Abstract: In one embodiment of the invention, a test structure far testing the sufficiency of tunnel opening sizes in a non-volatile memory cell includes N write paths aligned substantially in parallel, each of the write paths beings individually programmable and M floating gates, each of the floating gates overlapping each of the multiple write paths to form a N column-by-M row array of Intersecting areas. An N column-by-M row array of tunnel openings is formed in the intersecting areas and between the floating gates and write paths, with the tunnel openings in each array column being of a same size and the tunnel openings in each array row being of different sizes. A read path coupled to the M floating gates is operable to detect a programmed write path if the tunnel openings formed over the programmed write path are of sufficient size to successfully couple the M floating gates to the programmed write path.

Abstract: A test structure is disclosed for determining the smallest acceptable tunnel opening size in a non-volatile memory cell. Additionally, defect density for one or more tunnel opening sizes may also be determined. In one aspect, the test structure has continuous strips of active area that are used to form a “control” path, a “read” path, and a “write” path. A dielectric layer is formed over the active strips. A one-dimensional array containing a number (N) of same-sized tunnel openings is formed on the write path. A layer of poly silicon is deposited over the dielectric and patterned into strips that are perpendicular to the active strips. The poly silicon strips are aligned with the tunnel openings and form a floating gate and sense device, which is capacitively coupled to external probe pads through the common “control” path.