Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract: A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.

Abstract: A current regulator is provided for a two wire sensor and comprises first and second conductors arranged to provide a sensor output current, a first resistance and a current reference coupled across the first and second conductors, and a second resistance and sensor load terminals coupled across the first and second conductors. An amplifier has first and second inputs and an output. The first input is coupled to a first junction between the first resistance and the current reference, the second input is coupled to a second junction between the second resistance and the sensor load terminals, and the output is connected to the second input. The amplifier controls a first voltage at the first junction to be substantially equal to a second voltage at the second junction.