Patents by Inventor Allen Kirkpatrick

Allen Kirkpatrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
    Publication number: 20050277246
    Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
    Type: Application
    Filed: June 11, 2005
    Publication date: December 15, 2005
    Applicant: Epion Corporation
    Inventors: Allen Kirkpatrick, Sean Kirkpatrick, Martin Tabat, Thomas Tetreault, John Borland, John Hautala, Wesley Skinner
  • Method for forming carbonaceous hard film
    Patent number: 6416820
    Abstract: A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: July 9, 2002
    Assignee: Epion Corporation
    Inventors: Isao Yamada, Jiro Matsuo, Teruyuki Kitagawa, Allen Kirkpatrick