Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for machine learning. One of the methods includes receiving a document having a plurality of first text strings; extracting the plurality of first text strings from the document; providing the extracted plurality of first text strings to a first machine learning model, wherein the first machine learning model is trained to output a numerical vector representation for each input first text string; providing the output vector representations from the first machine learning model to a second machine learning model, wherein the second machine learning model is trained to output a second text string for each input vector representation; and processing the second text strings to generate an output.

Abstract: The present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for machine learning. One of the methods includes receiving a document having a plurality of first text strings; extracting the plurality of first text strings from the document; providing the extracted plurality of first text strings to a first machine learning model, wherein the first machine learning model is trained to output a numerical vector representation for each input first text string; providing the output vector representations from the first machine learning model to a second machine learning model, wherein the second machine learning model is trained to output a second text string for each input vector representation; and processing the second text strings to generate an output.

Abstract: The present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract: A method for forming a high aspect ratio feature is disclosed. The method includes depositing one or more silicon oxide/silicon nitride containing stacks on a substrate by depositing a first film layer on the substrate from a first plasma and depositing a second film layer having a refractive index on the first film layer from a second plasma. A predetermined number of first film layers and second film layers are deposited on the substrate. The first film layer and the second film layer are either a silicon oxide layer or a silicon nitride layer and the first film layer is different from the second film layer. The method further includes depositing a third film layer from a third plasma and depositing a fourth film layer on the third film layer from a fourth plasma. The fourth film layer has a refractive index greater than the first refractive index.

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract: Implementations of the present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

Abstract: In a method of isolating a polymer blend from solution, a homogeneous solution including a poly(arylene ether), a poly(alkenyl aromatic), and a solvent is combined with an anti-solvent to form a dispersion containing solid particles. The solid particles have improved handling properties compared to particles formed from precipitation of the poly(arylene ether) alone.

Abstract: A thermoplastic composition comprising recovered poly(arylene ether), less than or equal to 0.1 weight percent based on the total weight of the thermoplastic composition of a second recovered thermoplastic that gives off greater than or equal to 10 percent by mass of volatiles at a processing temperature for the thermoplastic composition; 0.025 to 4.0 weight percent, based on the total weight of the thermoplastic composition, of a third recovered thermoplastic selected from the group consisting of polyolefin, acrylonitrile-butadiene-styrene, polycarbonate, polycarbonate/acrylonitrile-butadiene-styrene blend, polymethyl methacrylate, polyamide, polyester, polycarbonate/polyester blend and combinations of two or more of the foregoing third recovered thermoplastics, wherein combinations of two or more of the foregoing third recovered thermoplastics are present in an amount of less than or equal to 10 weight percent, based on the total weight of the thermoplastic composition; and an optional virgin thermoplastic.