Abstract: A method for varying the resistance along a conductive layer. The method including the step of removing at least a portion of a resistance-altering constituent diffused within the conductive layer.

Abstract: An apparatus including at least one designated memory cell of a plurality of memory cells. Disposed within each designated memory cell is a resistance-altering constituent. Consequently, a first binary value is recognoized in each designated cell and at least a second binary value is recognized in each remaining cell.

Abstract: A method for varying the resistance along a conductive layer. The method including the step of removing at least a portion of a resistance-altering constituent diffused within the conductive layer.

Abstract: The invention is a method for separating target oligomers that are nucleic acid oligomers or analogs of a nucleic acid oligomer having a desired first subunit sequence, from impurity oligomers that is do not comprise the first subunit sequence. According to the invention, a mixture of oligomers comprising the target oligomers and the impurity oligomers, are loaded onto a separation medium under conditions such that the mixture of oligomers physically moves through the separation medium. The separation medium contains separation oligomers comprising a subunit sequence that is complementary to the first subunit sequence, and the separation oligomers are distributed in the separation medium during movement of the target and impurity oligomers through the separation medium. Conditions are controlled so that the rates of hybridization and dissociation of complementary portions of the target oligomers and the separation oligomers in the separation medium are about the same.

Abstract: A read-only memory having sets of word lines and bit lines orthogonal to each other and separated by an insulator. At specific cell sites, selected by a memory algorithm, a word line is connected to bit lines by a doped or undoped polysilicon data resistor. The use of a data resistor, rather the an active device such as a MOSFET, provides a saving in space by a factor of four. The polysilicon data resistor may have a range of values, the minimum of which is determined by the number of cell sites and the resistance of the word and bit lines. The maximum value of the data resistor is determined by thermal noise considerations. Within this range, the data resistors may also have discrete values so that more than one data level may be stored at a cell site, to provide even greater storage density.