Patents by Inventor Allen R. Kirkpatrick

Allen R. Kirkpatrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190279872
    Abstract: A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.
    Type: Application
    Filed: January 14, 2019
    Publication date: September 12, 2019
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
  • Patent number: 10409155
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: September 10, 2019
    Assignee: Exogensis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20190185991
    Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 20, 2019
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh
  • Patent number: 10202684
    Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: February 12, 2019
    Assignee: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh
  • Patent number: 10181402
    Abstract: A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiCX (0.05<X<3) formed by accelerated and focused Neutral Beam irradiation of a silicon substrate wherein the Neutral Beam is derived from a gas cluster ion beam which has had its cluster ions dissociated and charged particles removed.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: January 15, 2019
    Assignee: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
  • Publication number: 20180190468
    Abstract: A device such as a medical device and a method for making same provides a surface modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets.
    Type: Application
    Filed: March 1, 2018
    Publication date: July 5, 2018
    Inventors: Joseph Khoury, Sean R. Kirkpatrick, Michael J. Walsh, James G. Bachand, Allen R. Kirkpatrick
  • Patent number: 9799488
    Abstract: A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: October 24, 2017
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
  • Publication number: 20160172197
    Abstract: A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.
    Type: Application
    Filed: February 18, 2016
    Publication date: June 16, 2016
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
  • Publication number: 20150294838
    Abstract: A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.
    Type: Application
    Filed: December 16, 2014
    Publication date: October 15, 2015
    Applicant: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
  • Patent number: 9117628
    Abstract: An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the enclosure; measuring a temperature change of the beam strike due to the impacting beam; measuring a pressure change in the enclosure due to receiving the beam; and processing the measured temperature change and the measured pressure change to determine beam characteristics.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: August 25, 2015
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20150213996
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Application
    Filed: September 25, 2014
    Publication date: July 30, 2015
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20140363678
    Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.
    Type: Application
    Filed: August 22, 2014
    Publication date: December 11, 2014
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh
  • Patent number: 8847148
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: September 30, 2014
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20140021343
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Application
    Filed: March 15, 2013
    Publication date: January 23, 2014
    Applicant: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Patent number: 8629393
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 14, 2014
    Assignee: Exogenesis Corporation
    Inventors: Sean R Kirkpatrick, Allen R Kirkpatrick
  • Publication number: 20130213933
    Abstract: Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.
    Type: Application
    Filed: August 21, 2012
    Publication date: August 22, 2013
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20130105710
    Abstract: An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the enclosure; measuring a temperature change of the beam strike due to the impacting beam; measuring a pressure change in the enclosure due to receiving the beam; and processing the measured temperature change and the measured pressure change to determine beam characteristics.
    Type: Application
    Filed: October 25, 2012
    Publication date: May 2, 2013
    Applicant: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20120045615
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Application
    Filed: August 23, 2011
    Publication date: February 23, 2012
    Applicant: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Publication number: 20080245974
    Abstract: Method of infusing or introducing material into a substrate using a gas cluster ion beam. The method includes maintaining a reduced-pressure environment around a substrate holder and holding a substrate securely within that reduced-pressure environment. A gas-cluster ion beam formed from a pressurized gas mixture including an inert gas and at least one other atomic or molecular specie is provided to the reduced-pressure environment and accelerated. In one embodiment, the method includes irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate to form an infused region or gas-cluster ion-impact region therein by introducing part or all of the atomic or molecular specie into the surface. In another embodiment, the method includes modifying at least one electrical property of the surface of the substrate by irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate.
    Type: Application
    Filed: June 19, 2008
    Publication date: October 9, 2008
    Applicant: TEL EPION INC.
    Inventors: Allen R. Kirkpatrick, Sean Kirkpatrick, Martin D. Tabat, Thomas G. Tetreault, John O. Borland, John J. Hautala, Wesley J. Skinner
  • Patent number: 7410890
    Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
    Type: Grant
    Filed: June 11, 2005
    Date of Patent: August 12, 2008
    Assignee: TEL Epion Inc.
    Inventors: Allen R. Kirkpatrick, Sean Kirkpatrick, Martin D. Tabat, Thomas G. Tetreault, John O. Borland, John J. Hautala, Wesley J. Skinner