Patents by Inventor Allen T. Hall

Allen T. Hall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8774565
    Abstract: An electro-optic device is disclosed, in which an RF signal electrode is used as a bias ground electrode. Thus, for Z-cut lithium niobate electro-optic crystals, there is no need to place a buried bias electrode under the RF signal electrode and over the optical waveguide. As a result, both optical and the RF wave propagation losses are reduced. In another embodiment, a buried bias electrode is placed over the optical waveguide between two buffer layers having a different electrical conductivity. The buffer layer underneath the buried bias electrode has a larger electrical conductivity than the buffer layer above the buried bias electrode. The buffer layer underneath the buried bias electrode reduces the optical loss penalty due to the buried bias electrode located above the optical waveguide, while the buffer layer above the bias electrode reduces leakage currents.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: July 8, 2014
    Assignee: JDS Uniphase Corporation
    Inventors: Karl Kissa, Allen T. Hall
  • Publication number: 20120099812
    Abstract: An electro-optic device is disclosed, in which an RF signal electrode is used as a bias ground electrode. Thus, for Z-cut lithium niobate electro-optic crystals, there is no need to place a buried bias electrode under the RF signal electrode and over the optical waveguide. As a result, both optical and the RF wave propagation losses are reduced. In another embodiment, a buried bias electrode is placed over the optical waveguide between two buffer layers having a different electrical conductivity. The buffer layer underneath the buried bias electrode has a larger electrical conductivity than the buffer layer above the buried bias electrode. The buffer layer underneath the buried bias electrode reduces the optical loss penalty due to the buried bias electrode located above the optical waveguide, while the buffer layer above the bias electrode reduces leakage currents.
    Type: Application
    Filed: October 11, 2011
    Publication date: April 26, 2012
    Applicant: JDS Uniphase Corporation
    Inventors: Karl Kissa, Allen T. Hall
  • Patent number: 5023589
    Abstract: A low-resistance nickel-chromium-based thin film resistor and method for forming same. A nickel-chromium alloy film is coated on at least one side with a layer of gold, the resulting gold-coated alloy film is heated at a temperature and for a time effective to cause diffusion of sufficient gold into the nickel-chromium film to lower its resistance to a desired value, and the gold layer is then removed, to leave a nickel-chromium-gold composite film resistor.
    Type: Grant
    Filed: September 8, 1989
    Date of Patent: June 11, 1991
    Assignee: Electro-Films, Inc.
    Inventor: Allen T. Hall