Abstract: The invention described herein provides gene therapy vectors, such as adeno-associated virus (AAV) vectors, that co-express a functional protein (such as a miniaturized human micro-dystrophin gene product) and one or more additional coding sequences for an RNAi sequence (siRNA, shRNA, miRNA), an antisense sequence, a guide sequence for a gene editing enzyme (such as an sgRNA for CRISPR/Cas9, or a crRNA for CRISPR/Casl2a), and/or a micro RNA, and methods of using the vectors to treat subjects suffering from a muscular dystrophy such as DMD/BMD.

Abstract: A method of manufacturing a light source carrier with at least one light source, including: providing a substrate with a plurality of light source groups disposed thereon, wherein each light source group includes the at least one light source; irradiating a first light upon one of the light source groups through a first mask; capturing a photoluminescent light emitted by the one of the light source groups to acquire data; comparing the data with a reference to determine whether the one of the light source groups is qualified; providing a carrier; and transferring the one of the light source groups from the substrate to the carrier if the one of the light source groups is qualified.

Abstract: Disclosed herein are methods of generating proteoglycans with distinct glycan structures in engineered, non-naturally occurring eukaryotic cells. These methods make accessible a dynamic range of protein glycosylation. Compositions of engineered, non-naturally occurring cells capable of generating these proteoglycans are also disclosed herein.

Abstract: An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines.

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract: An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines.

Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

Abstract: An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines.

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

Abstract: An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines.