Abstract: A power amplifying apparatus includes a first gallium arsenide substrate which may include a photonic power supply laser diode, a diamond substrate formed over the first gallium arsenide substrate, a silicon substrate formed over the diamond substrate, a second gallium arsenide substrate, a gallium nitride switching transistor and a photonic power supply photo diode array.

Abstract: A power amplifying apparatus comprises a base layer hosting a power supply, a core insulating layer, a growth layer, and a high power amplifier layer. The high power amplifier layer hosts a control section, a first drive and amplification section, an electrical (RF) signal to optical signal converter section, a plurality of photolithically defined substrate channels forming embedded optical waveguide structures for optical signal routing, an optical signal to electrical signal converter section, a second drive and amplification section, and at least one high frequency and high breakdown voltage power transistor.

Abstract: A protection circuit includes a diode chip, and a switching device integrated with the diode chip, the switching device being isolated, optically triggered, optically powered, and the diode chip connected between a high side terminal of the switching device and an input to a first inverting amplifier, the diode chip further supplying a current when an overvoltage occurs between a drain and a source of the switching device.

Abstract: A power amplifier architecture includes a plurality of non-linear optically driven power amplifier modules. The plurality of non-linear optically driven power amplifier modules are selectively connectable utilizing a programmable algorithm for combining at least two modules of the plurality of non-linear optically driven power amplifier modules in a time sequence yielding a piecewise approximation of a continuous waveform. The power amplifier architecture further includes at least one RF drive selectively connected to at least one of the plurality of non-linear optically driven power amplifier modules via an optical signal link generating a separate drive signal for each of the plurality of non-linear optically driven power amplifier modules.

Abstract: A composite plate comprising CNT bundles with high thermal conductivity is formed by the method comprising preparing a CNT growth substrate, depositing a CNT growth catalyst on the CNT growth substrate, preparing a wafer with etched through via arrays, placing the wafer with the etched through via arrays over the CNT growth substrate with the CNT growth catalyst, growing CNT bundles in the etched through via arrays on the wafer over the CNT growth substrate with the CNT growth catalyst in a CVD chamber to form a wafer matrix CNT composite structure; and removing the CNT growth substrate from the wafer matrix CNT composite structure. The formed composite plate comprising CNT bundles with high thermal conductivity has improved CTE silicon match, has a more effective thermal conductivity than a silicon matrix or Cu or Cu alloy substrate, and contains nanotubes that remain vertical.

Abstract: A power amplifier for a dual antenna is disclosed. The power amplifier comprises at least four controlled amplifier loops receiving a signal to be transmitted. The power amplifier also comprises a first combining structure combining at least two of the amplifier loops and a second combining structure combining at least two of the amplifier loops. The power amplifier also comprises a ninety degree hybrid receiving output from the first and second combining structures and providing output to a first antenna output and a second antenna output.

Abstract: An impedance matching transformer is disclosed. The transformer includes a conductive ground plane and a dielectric substrate disposed upon the conductive ground plane. The dielectric substrate has a first end and a second end. The dielectric substrate may be of a unitary construction. A conductive current path is disposed upon the dielectric substrate. The height of the dielectric substrate at the second end is greater than the height of the dielectric substrate at the first end.