Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.

Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.

Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.