Abstract: An improved etch of thick protective topside stack films, which cover metal pads of a semiconductor device. The invention uses a downstream plasma isotropic etch to etch the topside stack film. In one embodiment, the downstream plasma isotropic etch is used to etch only part of the topside stack films. A subsequent anisotropic oxide plasma etch is used to etch the remaining topside stack film to the metal pads. In another embodiment, the downstream plasma isotropic etch is used to etch completely through the topside stack films to the metal pad. The invention allows the etching through topside stack films greater than 5 microns.

Abstract: An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

Abstract: A silicon layer is etched using a plasma etcher equipped with an endpoint control device. CF4 and N2 are provided to the plasma etcher at lower flow rates than those typically used during fixed time etching processes. The endpoint control device monitors optical emissions from the etching chamber at a particular wavelength to detect a predetermined change in intensity. When the change in intensity is detected, the etching is terminated.

Abstract: An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

Abstract: Apparatus for monitoring the hydrogen peroxide concentration in a sulfuric acid bath used to remove photoresist from semiconductor wafers uses the amount of bubbles in the fluid mixture to signal the addition of hydrogen peroxide. The bubbles are directly related to the hydrogen peroxide in sulfuric acid mixture. The bubbles are sensed by a light source and photoelectric sensor connected to a threshold adjustment control which controls a metering solenoid valve to add hydrogen peroxide from a reservoir to the bath when the bubbles decrease.

Abstract: An in-situ etching process for creating local interconnects in a semiconductor device includes using one etching tool to: etch through an organic, or inorganic BARC layer using O.sub.2 gas, or C.sub.2 F.sub.6 /O.sub.2 gases, respectively; a masked dielectric layer to a stop layer using a mixture of C.sub.4 F.sub.8, CH.sub.3 F and argon (Ar) gasses; etch away the mask layer using a mixture of O.sub.2 and Ar gasses; and, etch through the stop layer using a mixture of CH.sub.3 F gas and O.sub.2 gas. Remaining portions of the BARC layer, whether organic or inorganic, are also removed during the in-situ etching process using appropriate gases. The method then includes depositing conductive material within the openings that were etched to form local interconnects.