Patents by Inventor Allison K. Holbrook

Allison K. Holbrook has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric
    Patent number: 7176531
    Abstract: According to one exemplary embodiment, a method for integrating first and second metal layers on a substrate to form a dual metal NMOS gate and PMOS gate comprises depositing a dielectric layer over an NMOS region and a PMOS region of the substrate. The method further comprises depositing the first metal layer over dielectric layer. The method further comprises depositing the second metal layer over the first metal layer. The method further comprises implanting nitrogen in the NMOS region of substrate and converting a first portion of the first metal layer into a metal oxide layer and converting a second portion of the first metal layer into metal nitride layer. The method further comprises forming the NMOS gate and the PMOS gate, where the NMOS gate comprises a segment of metal nitride layer and the PMOS gate comprises a segment of the metal oxide layer.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: February 13, 2007
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison K. Holbrook, Joong S. Jeon, George J. Kluth
  • Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure
    Patent number: 6872613
    Abstract: According to one exemplary embodiment, a method for integrating first and second metal layers on a substrate to form a dual metal NMOS gate and PMOS gate comprises depositing a dielectric layer over an NMOS region and a PMOS region of the substrate. The method further comprises depositing the first metal layer over dielectric layer. The method further comprises depositing the second metal layer over the first metal layer. The method further comprises implanting nitrogen in the NMOS region of substrate and converting a first portion of the first metal layer into a metal oxide layer and converting a second portion of the first metal layer into metal nitride layer. The method further comprises forming the NMOS gate and the PMOS gate, where the NMOS gate comprises a segment of metal nitride layer and the PMOS gate comprises a segment of the metal oxide layer.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: March 29, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison K. Holbrook, Joong S. Jeon, George J. Kluth