Abstract: A sensor device (100, 2800) for detecting particles, the sensor device (100, 2800) comprising a substrate (102), a first doped region (104) formed in the substrate (102) by a first dopant of a first type of conductivity, a second doped region (106, 150) formed in the substrate (102) by a second dopant of a second type of conductivity which differs from the first type of conductivity, a depletion region (108) at a junction between the first doped region (104) and the second doped region (106, 150), a sensor active region (110) adapted to influence a property of the depletion region (108) in the presence of the particles, and a detection unit (112) adapted to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region (104) and the second doped region (106, 150), the electric measurement being indicative of the presence of the particles in the sensor active region (110).

Abstract: An electronic device (100), the electronic device (100) comprising a substrate (101), a convertible structure (102) arranged on and/or in the substrate (101), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, wherein the convertible structure (102) has a first portion having a first width (w1), and has a second portion having a second width (w2), the second width (w2) being smaller than the first width (w1), and a protrusion (108) protruding through the convertible structure (102) to thereby narrow the second portion of the convertible structure (102) from the first width (w1) to the second width (w2).

Abstract: A memory cell, the memory cell comprising a substrate, a nanowire extending along a vertical trench formed in the substrate, a control gate surrounding the nanowire, and a charge storage structure formed between the control gate and the nanowire.

Abstract: A sensor device (100, 2800) for detecting particles, the sensor device (100, 2800) comprising a substrate (102), a first doped region (104) formed in the substrate (102) by a first dopant of a first type of conductivity, a second doped region (106, 150) formed in the substrate (102) by a second dopant of a second type of conductivity which differs from the first type of conductivity, a depletion region (108) at a junction between the first doped region (104) and the second doped region (106, 150), a sensor active region (110) adapted to influence a property of the depletion region (108) in the presence of the particles, and a detection unit (112) adapted to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region (104) and the second doped region (106, 150), the electric measurement being indicative of the presence of the particles in the sensor active region (110).

Abstract: A field effect transistor semiconductor device configuration is described, which is particularly suitable for use in DC: DC converters associated with logic circuitry. The device includes a first gate electrode (18) which extends adjacent to its channel-accommodating region (14) and a second, dummy gate electrode (30) which extends adjacent to the drain drift region (12). The second gate electrode is electrically connected to the first gate electrode and serves to reduce the on-resistance of the device and improve its reliability by reducing hot carrier degradation.

Abstract: An electronic device (100), the electronic device (100) comprising a substrate (101), a convertible structure (102) arranged on and/or in the substrate (101), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, wherein the convertible structure (102) has a first portion having a first width (w1), and has a second portion having a second width (w2), the second width (w2) being smaller than the first width (w1), and a protrusion (108) protruding through the convertible structure (102) to thereby narrow the second portion of the convertible structure (102) from the first width (w1) to the second width (w2).

Abstract: A memory cell (300, 500), the memory cell (300, 500) comprising a substrate (301), a nanowire (302) extending along a vertical trench formed in the substrate (301), a control gate (303) surrounding the nanowire (302), and a charge storage structure (320, 501) formed between the control gate (303) and the nanowire (302).