Abstract: Provided is an eye implant having a lens sheath which is embodied for insertion in a capsular bag of an eye, is elastic, delimits a cavity in its interior and has a through hole via which the cavity is accessible from outside of the lens sheath, a plurality of reservoirs which are fastened to the lens sheath, project from the lens sheath to the outside, have an adhesive in their interior and are embodied to dispense the adhesive when pressed against the capsular bag, and at least two adapters which are fastened to the lens sheath, project from the lens sheath into the interior, and are embodied to engage with a respective haptic of an accommodative intraocular lens.

Abstract: Provided is an eye implant having a lens sheath which is embodied for insertion in a capsular bag of an eye, is elastic, delimits a cavity in its interior and has a through hole via which the cavity is accessible from outside of the lens sheath, a plurality of reservoirs which are fastened to the lens sheath, project from the lens sheath to the outside, have an adhesive in their interior and are embodied to dispense the adhesive when pressed against the capsular bag, and at least two adapters which are fastened to the lens sheath, project from the lens sheath into the interior, and are embodied to engage with a respective haptic of an accommodative intraocular lens.

Abstract: A source hollow body serves for predefining a plasma chamber for a section of a source plasma of an EUV plasma light source. The hollow body has at least one chamber wall that delimits the plasma chamber. The chamber wall has a multilayer construction. This results in a source hollow body that improves the practical usability of an EUV plasma light source equipped with the source hollow body.

Abstract: A source hollow body serves for predefining a plasma chamber for a section of a source plasma of an EUV plasma light source. The hollow body has at least one chamber wall that delimits the plasma chamber. The chamber wall has a multilayer construction. This results in a source hollow body that improves the practical usability of an EUV plasma light source equipped with the source hollow body.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: The present disclosure relates to an actuator for projection exposure systems that include a magnet. The magnet is encapsulated and/or supported in a magnet holding plate that is produced by microtechnical production methods so that a moving manipulator surface is held in the magnet holding plate via monolithic or bonded connections without additional connecting material so that there is a secure connection.

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Abstract: A method for preventing contaminating gaseous substances (18) from passing through an opening (17b) in a housing (4a) of an EUV lithography apparatus (1), wherein at least one optical element for guiding EUV radiation (6) is arranged in the housing (4a). The method involves: generating at least one gas flow (21a, 21b) which deflects the contaminating substances (18, 18?), and in particular is directed counter to the flow direction (Z) thereof, in the region of the opening (17b). The gas flow (21a, 21b) and the EUV radiation (6) are generated in pulsed fashion and the pulse rate of the gas flow (21a, 21b) is defined in a manner dependent on the pulse rate of the contaminating substances (18, 18?) released under the action of the pulsed EUV radiation (6), wherein both pulse rates are preferably equal in magnitude, and wherein, in the region of the opening (17b), the gas pulses temporally overlap the pulses of the contaminating substances (18, 18?).

Abstract: The present disclosure relates to an actuator for projection exposure systems that include a magnet. The magnet is encapsulated and/or supported in a magnet holding plate that is produced by microtechnical production methods so that a moving manipulator surface is held in the magnet holding plate via monolithic or bonded connections without additional connecting material so that there is a secure connection.

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) comprises a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Abstract: A cleaning module for an EUV lithography device with a supply (206) for molecular hydrogen, a heating filament (210) and a line (212) for atomic and/or molecular hydrogen. The line (212) has at least one bend with a bending angle of less than 120 degrees, and has a material on its inner surface which has a low recombination rate for atomic hydrogen. The supply (206) is of flared shape at its end, which faces the heating filament (210). A gentler cleaning of optical elements is achieved with such a cleaning module, or also by exciting a cleaning gas with a cold cathode or a plasma, or by filtering out charged particles via of electrical and/or magnetic fields.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: Inside a vacuum chamber 200 a cleaning unit 204 provides atomic hydrogen or atomic deuterium for cleaning a surface 202 at a pressure of less than 10?4 Torr or of more than 10?3 Torr. The surface 202 is heated by the heating unit 203 to a temperature of at least 50° C. This allows achieving cleaning rates of more than 60 ?/h. Preferably, the surface 202 is the surface of a multilayer mirror 201 as used in an EUV lithography apparatus.