Patents by Inventor Alois E. Widmer

Alois E. Widmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LPCVD Deposition of tantalum silicide
    Patent number: 4504521
    Abstract: An improved method of forming a polycide structure is disclosed. An in-situ doped silicon layer is deposited in the amorphous state by LPCVD at 560.degree.-580.degree. C., a polycrystalline tantalum rich tantalum silicide layer is deposited thereover by LPCVD and the structure annealed to convert the silicon to the polycrystalline state and the tantalum silicide to TaSi.sub.2. The deposition and annealing procedures are carried out sequentially in a single reaction vessel.
    Type: Grant
    Filed: March 22, 1984
    Date of Patent: March 12, 1985
    Assignee: RCA Corporation
    Inventors: Alois E. Widmer, Roland Fehlmann