Abstract: In a feed-through unit of a conductor (2) through an opening in a conducting wall, the conductor together with shunt elements connected between the conductor and the wall--which shunt elements have a first and a second contact surface with a conducting coating--forms a rotationally symmetrical or mirror symmetrical configuration which completely or substantially closes the opening.In order to guarantee an even thermal stress on the individual shunt elements, the latter are so formed that the first contact surface and the second contact surface run parallel and the shunt element is located in each case essentially between the two contact surfaces. Several shunt elements can be arranged in shunt rows, whereby successive shunt elements are seriated either directly or separated by conducting intermediate layers.

Abstract: A method of, and apparatus for, the detection of magnetization of a magnetic circuit, especially for the detection of a current flow interlinked with the magnetic circuit, wherein a timed or temporal cyclic magnetic flux change is generated by means of a detection-current flow used for detection purposes and interlinked with the magnetic circuit and a detection signal is formed as a function of time intervals dependent upon the magnetization.

Abstract: A semiconductor component having at least three p-n-junctions which may be switched from a blocking state to a conducting state. The base zone, positioned between the second and third p-n-junctions, is characterized in that it comprises three single zones, the center zone of which is more highly doped and appreciably thinner than either of the two outer zones. The doping concentrations in the two outer zones are equal to one another and appreciably lower than that in a control zone, which is positioned between the first and second p-n-junctions. The effect of the foregoing construction is to reduce the recovery time of the semiconductor component without causing an increase in the forward potential drop, or vice-versa.