Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Abstract: A method for determining an overlay metric is disclosed comprising obtaining angle resolved distribution spectrum data relating to a measurement of the target structure comprising a symmetrical component. An overlay dependent contour of a feature of said target structure is determined from said angle resolved distribution spectrum data, from which an overlay metric is determined. The method comprises exposing an exposed feature onto a masked layer comprising a mask which defines masked and unmasked areas of the layer, such that a first portion of the exposed feature is exposed on a masked area of said layer and a second portion of the exposed feature is exposed on a non-masked area of said layer, the size of the first portion with respect to the second portion being overlay dependent; and performing an etch step to define an etched feature, the etched feature corresponding to said second portion of the exposed feature.

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract: Techniques are provided for training a target language model based at least in part on data associated with a reference language model. For example, language data utilized to train an English language model may be translated and provided as training data to train a German language model to recognize utterances provided in German. By utilizing the techniques herein, the efficiency of training a new language model may be improved due at least in part to replacing labor-intensive operations conventionally performed by specialized personnel with machine-generated data. Additionally, techniques discussed herein provide for reducing the time required for training a new language model by leveraging information associated with utterances of one language to train the new language model associated with a different language.

Abstract: Techniques are provided for training a language recognition model. For example, a language recognition model may be maintained and associated with a reference language (e.g., English). The language recognition model may be configured to accept as input an utterance in the reference language and to identify a feature to be executed in response to receiving the utterance. New language data (e.g., other utterances) provided in a different language (e.g., German) may be obtained. This new language data may be translated to English and utilized to retrain the model to recognize reference language data as well as language data translated to the reference language. Subsequent utterances (e.g., English utterances, or German utterances translated to English) may be provided to the updated model and a feature may be identified. One or more instructions may be sent to a user device to execute a set of instructions associated with the feature.

Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

Abstract: This disclosure includes a variety of methods of describing a shape in a hierarchical manner, and uses of such a hierarchical description. In particular, this disclosure includes a method comprising: fitting one or more sub-shapes of a first order against a shape; determining an error of the fitting; and fitting one or more sub-shapes of a second order against the error.

Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

Abstract: A method includes receiving a register-transfer-level description and a gate-level description for an integrated circuit design. The gate-level description includes one or more spare latches implemented as reconfigurable latch filler cells. The method further includes receiving an engineering change order, and, responsive to the engineering change order, adding the at least one additional latch to the register-transfer-level description and, for at least one of the at least one additional latch, selecting one of the one or more spare latches in the register-transfer-level description to yield a selected spare latch. The method further includes, for the selected spare latch, identifying a selected reconfigurable latch filler cell in the gate-level description and replacing the selected reconfigurable latch filler cell with an operational latch in the gate-level description. The method further includes finalizing the integrated circuit design.

Abstract: A method includes receiving a register-transfer-level description and a gate-level description for an integrated circuit design. The gate-level description includes one or more spare latches implemented as reconfigurable latch filler cells. The method further includes receiving an engineering change order, and, responsive to the engineering change order, adding the at least one additional latch to the register-transfer-level description and, for at least one of the at least one additional latch, selecting one of the one or more spare latches in the register-transfer-level description to yield a selected spare latch. The method further includes, for the selected spare latch, identifying a selected reconfigurable latch filler cell in the gate-level description and replacing the selected reconfigurable latch filler cell with an operational latch in the gate-level description. The method further includes finalizing the integrated circuit design.

Abstract: A method includes receiving a register-transfer-level description and a gate-level description for an integrated circuit design. The gate-level description includes one or more spare latches implemented as reconfigurable latch filler cells. The method further includes receiving an engineering change order, and, responsive to the engineering change order, adding the at least one additional latch to the register-transfer-level description and, for at least one of the at least one additional latch, selecting one of the one or more spare latches in the register-transfer-level description to yield a selected spare latch. The method further includes, for the selected spare latch, identifying a selected reconfigurable latch filler cell in the gate-level description and replacing the selected reconfigurable latch filler cell with an operational latch in the gate-level description. The method further includes finalizing the integrated circuit design.

Abstract: A computer-implemented method includes identifying an in initial register-transfer-level description for an integrated circuit design and adding one or more spare latches to the initial register-transfer-level description to yield a modified register-transfer-level description for the integrated circuit design. The computer-implemented method further includes performing placement and routing for the modified register-transfer-level description to yield a gate-level description for the integrated circuit design. The one or more spare latches exist in said gate-level description. The computer-implemented method further includes converting at least one of the one or more spare latches in the gate-level description into a reconfigurable latch filler cell to yield a modified gate-level description for the integrated circuit design and finalizing the integrated circuit design. A corresponding computer program product and computer system are also disclosed.