Abstract: Techniques are provided for non-volatile storage self-detecting that a heating event has occurred to the non-volatile storage. One example of the heating event is an Infrared (IR) reflow process. In one aspect, a block of memory cells in a memory device are put through a number of program/erase cycles. A group of the memory cells in the cycled block are programmed to a reference threshold voltage distribution. Some time may pass after programming the cycled block. The memory device self-detects that there has been a heating event in response to a shift in the reference VT distribution being more than an allowed amount. The memory device may switch from a first programming mode to a second programming mode in response to detecting that the heating event has occurred.

Abstract: A method performed by a controller includes initiating a first data write operation and an erase operation on a portion of a non-volatile memory. The first data write operation corresponds to a first write resolution. The method includes initiating a second data write operation to write test data to the portion of the non-volatile memory. The second data write operation corresponds to a second write resolution that is greater than the first write resolution. The method also includes reading a representation of the test data from the portion of the non-volatile memory.