Abstract: Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.

Abstract: A temperature-controlled showerhead assembly includes a stem with cooling gas passageways and at least one process gas delivery passageway, and a back plate thermally coupled to the stem. The showerhead also includes a face plate attached to the back plate and a convective heat transfer element (CHTE) thermally coupled to the back plate. The CHTE includes a sealing cup which isolates the CHTE heat transfer structures from the process environment. The CHTE includes an internal plenum including an inlet path for receiving a flow of cooling gas via at least a first one of the plurality of cooling gas passageways, and an outlet path for removing the flow of cooling gas from the CHTE via at least a second one of the plurality of cooling gas passageways. The received flow of cooling gas is thermally coupled with a surface of the back plate.

Abstract: Processing methods and apparatus for depositing a protective layer on internal surfaces of a reaction chamber are provided. One method may include depositing, while no wafers are present in the reaction chamber having interior surfaces, a first layer of protective material onto the interior surfaces, the interior surfaces comprising a first material, processing, after the depositing the first layer, a portion of a batch of wafers within a reaction chamber, measuring an amount of the first material in the reaction chamber during processing the portion of the batch of wafers, or on one of the wafers in the portion of the batch of wafers, determining that the first amount exceeds a threshold, and depositing, in response to determining that the first amount exceeds the threshold and while no wafers are present in the reaction chamber, a second layer of protective material onto the interior surfaces of the reaction chamber.

Abstract: Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.

Abstract: Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.

Abstract: A solar energy thermal storage system can include a receiver in which a first storage medium is heated by insolation. First and second thermal storage reservoirs for a second storage medium can be provided. A first heat exchanger can be configured to transfer heat in the first storage medium to the second storage medium. A buffer tank can be located at a height above the receiver and can be fluidically connected to the first heat exchanger at its inlet and the receiver at its outlet. A second heat exchanger can be configured to transfer heat between the second storage medium and pressurized water and/or steam. The use of a buffer tank in conjunction with the first storage medium increases the overall efficiency of the system and results in a higher temperature for the thermal storage system, which can be used to generate superheated steam.

Abstract: A solar energy thermal storage system can include a receiver in which a first storage medium is heated by insolation. First and second thermal storage reservoirs for a second storage medium can be provided. A first heat exchanger can be configured to transfer heat in the first storage medium to the second storage medium. A buffer tank can be located at a height above the receiver and can be fluidically connected to the first heat exchanger at its inlet and the receiver at its outlet. A second heat exchanger can be configured to transfer heat between the second storage medium and pressurized water and/or steam. The use of a buffer tank in conjunction with the first storage medium increases the overall efficiency of the system and results in a higher temperature for the thermal storage system, which can be used to generate superheated steam.