Patents by Inventor Alon RON

Alon RON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11062902
    Abstract: A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: July 13, 2021
    Assignee: Ramot at Tel-Aviv University Ltd.
    Inventors: Yoram Dagan, Gil Markovich, Alon Ron, Amir Hevroni
  • Publication number: 20210052884
    Abstract: Apparatus (20) is provided that includes a battery (48) including first and second poles (78, 79); and a circuit board (50) that includes electronic circuitry (53), the second pole (79) electrically coupled to the circuitry (53). A battery-isolation tab (42, 142) is removably disposed between the first pole (78) and the circuitry (53), and includes a non-conductive substrate (90) configured to electrically isolate the first pole (78) from the circuitry (53), while the tab (42, 142) is disposed between the first pole (78) and the circuitry (53); and a conductive layer (92) disposed upon the non-conductive substrate (90), the conductive layer (92) being electrically coupled to the first pole (78) and configured to facilitate electrical coupling of the first pole (78) to the circuitry (53), while the tab (42, 142) is disposed between the first pole (78) and the circuitry (53). Other embodiments are also described.
    Type: Application
    Filed: January 10, 2019
    Publication date: February 25, 2021
    Applicant: THERANICA BIO-ELECTRONICS LTD.
    Inventors: Ronen JASHEK, Alon RON, Roy ZIMMERMAN, Ofer RIVKIND, Rostislav BARABASH, Arie RAVID
  • Publication number: 20190273012
    Abstract: A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.
    Type: Application
    Filed: August 16, 2017
    Publication date: September 5, 2019
    Applicant: Ramot at Tel-Aviv University Ltd
    Inventors: Yoram DAGAN, Gil MARKOVICH, Alon RON, Amir HEVRONI