Abstract: The present invention relates to an X-ray imaging system. The invention further relates to an X-ray sensor to be used in such system and to a method for manufacturing such sensors. According to the invention, the combination of a lower saturation dose and obtaining a plurality of image frames during a single exposure, can be used to form a final X-ray image having an improved dynamic range.

Abstract: The present invention relates to an X-ray imaging system. The invention further relates to an X-ray sensor to be used in such system and to a method for manufacturing such sensors. According to the invention, the combination of a lower saturation dose and obtaining a plurality of image frames during a single exposure, can be used to form a final X-ray image having an improved dynamic range.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows. According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides.

Abstract: An array-based C-MOS sensor device is provided with a facility for on the basis of non-destructive cell readout generating a radiation dose-sensing signal. In particular, the facility is arranged for accessing a subset of multiple distributed C-MOS cells across the array and feeding by such accessed cells an algorithmic means for therein generating an overall feedback dose control signalization and/or an over-all trigger signalization.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows. According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides.

Abstract: A CMOS-based sensor apparatus comprises an array of sensor cells that are interconnected by a first set of vertical driver lines to a selective driver facility and by a second set of horizontal sensing lines to a sensing facility for sensing respectively sensed amounts of radiation. In particular, the sensor cells through being appropriately spaced in at least either row or column direction, comprise a redundancy facility that is selectively activatable for isolating an interconnect short on the basis of externally applied control actuation.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.

Abstract: An array-based C-MOS sensor device is provided with a facility for on the basis of non-destructive cell readout generating a radiation dose-sensing signal. In particular, the facility is arranged for accessing a subset of multiple distributed C-MOS cells across the array and feeding by such accessed cells an algorithmic means for therein generating an overall feedback dose control signalization and/or an overall trigger signalization.

Abstract: The invention relates to an image pick up device (401) with pixels arranged in rows and columns. Every pixel (301) comprises a photosensitive element (302), a floating diffusion (304), a transfer transistor (303), an amplifying transistor (305) having its control electrode connected to the floating diffusion (304), and a reset transistor (306). An external node (310) is coupled to a selection switch via a row selection bus (406). The selection switch (411) provides either a first bias voltage, generated by a first voltage source (409), or a second bias voltage, generated by a second volt age source (410), to the row selection bus (406). Applying the first bias voltage and simultaneously turning on the reset transistor (306) programs the floating diffusion (304) to the first bias voltage which biases the amplifying transistor (305) in an on-mode, thereby selecting the pixel (301).