Abstract: A method of welding includes providing first and second joining partners, providing a welding apparatus that includes a sonotrode comprising a structured working surface, arranging the first and second joining partners to contact one another, and forming a welded connection between the first and second joining partners by contacting the first joining partner with the structured working surface and vibrating the sonotrode at an ultrasonic frequency, wherein the structured working surface comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and wherein for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging at least one semiconductor substrate in a housing, each semiconductor substrate including a first metallization layer attached to a dielectric insulation layer, the housing including a through hole extending through a component of the housing; inserting a fastener into the through hole such that an upper portion of the fastener is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a mounting surface, the mounting surface comprising a hole, wherein the housing is arranged on the mounting surface such that the through hole is aligned with the hole in the mounting surface; and exerting a force on the printed circuit board such that the force causes the fastener to be pressed into the hole in the mounting surface so as to secure the housing to the mounting surface.

Abstract: A method of welding includes providing first and second joining partners, providing a welding apparatus that includes a sonotrode comprising a structured working surface, arranging the first and second joining partners to contact one another, and forming a welded connection between the first and second joining partners by contacting the first joining partner with the structured working surface and vibrating the sonotrode at an ultrasonic frequency, wherein the structured working surface comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and wherein for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

Abstract: An ultrasonic welding apparatus includes a sonotrode comprising a structured working surface that comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

Abstract: A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging at least one semiconductor substrate in a housing, each semiconductor substrate including a first metallization layer attached to a dielectric insulation layer, the housing including a through hole extending through a component of the housing; inserting a fastener into the through hole such that an upper portion of the fastener is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a mounting surface, the mounting surface comprising a hole, wherein the housing is arranged on the mounting surface such that the through hole is aligned with the hole in the mounting surface; and exerting a force on the printed circuit board such that the force causes the fastener to be pressed into the hole in the mounting surface so as to secure the housing to the mounting surface.

Abstract: A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Abstract: An ultrasonic welding apparatus includes a sonotrode comprising a structured working surface that comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Abstract: One aspect relates to a method that includes bonding an electrically conductive element to a bonding surface of a bonding partner by increasing a temperature of a bonding section of the electrically conductive element from an initial temperature to an increased temperature by passing an electric heating current through the bonding section, and pressing the bonding section with a pressing force against the bonding surface using a sonotrode and introducing an ultrasonic vibration into the bonding section via the sonotrode such that the increased temperature of the bonding section, the ultrasonic signal in the bonding section and the pressing force are simultaneously present and cause the formation of a tight and direct bond between the bonding section and the bonding surface.