Patents by Inventor Alphonse TORRES

Alphonse TORRES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High electron mobility transistor and method of fabrication having reduced gate length and leak current
    Patent number: 10879383
    Abstract: A high-electron-mobility field-effect transistor includes a superposition of first and second layers of semiconductor materials so as to form an electron gas layer and includes a gate stack arranged on the superposition. The gate stack includes a conductive electrode and an element made of p-doped semiconductor material, arranged between the conductive electrode and the superposition. The gate stack includes a first dielectric layer arranged between the conductive electrode and the element made of semiconductor material. The element made of semiconductor material, the first dielectric layer, and the conductive electrode have aligned lateral flanks.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: December 29, 2020
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Julien Buckley, Matthew Charles, Alphonse Torres
  • HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FABRICATION HAVING REDUCED GATE LENGTH AND LEAK CURRENT
    Publication number: 20190334022
    Abstract: A high-electron-mobility field-effect transistor includes a superposition of first and second layers of semiconductor materials so as to form an electron gas layer and includes a gate stack arranged on the superposition. The gate stack includes a conductive electrode and an element made of p-doped semiconductor material, arranged between the conductive electrode and the superposition. The gate stack includes a first dielectric layer arranged between the conductive electrode and the element made of semiconductor material. The element made of semiconductor material, the first dielectric layer, and the conductive electrode have aligned lateral flanks.
    Type: Application
    Filed: April 24, 2019
    Publication date: October 31, 2019
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Julien BUCKLEY, Matthew CHARLES, Alphonse TORRES