Abstract: Compositions and methods for identifying antigen-specific T cells, including determining paired T cell receptor sequences for a specific antigen, are described. Compositions and methods for identifying neoantigen-specific T cells are also described. Microfluidic devices useful for identifying antigen-specific T cells, and methods of using the same, are also described.

Abstract: Disclosed herein is a surfactant additive, ethylenediamine tetrakis(ethoxylate-block-propoxylate) tetrol with 16 ethylene oxide repeat units and 18 propylene oxide repeat units (known by its trade name as Tetronic 90R4) used as a droplet-additive, or to coat DMF driving electrode surfaces which dramatically improves the capability to work with high-protein-content liquids (e.g., whole blood) on digital microfluidic chips. This surfactant prevents protein adsorption and fouling of DMF electrode surfaces to an extent that was heretofore impossible. Specifically, this surfactant allows for the manipulation of droplets of undiluted whole blood for >1 hour per electrode (>1 50 times better than what is possible for any known additive). This improvement in handling high protein content media will revolutionize blood-based diagnostics on digital microfluidic platforms.

Abstract: Disclosed herein are methods and devices for antigen-specific T cell identification or neoantigen identification. Also disclosed herein are devices for separating and isolating antigen-specific T cells or other particles of a certain size from a population of particles of different sizes. Also describe herein are methods and devices for the separation and isolation of barcoded T cells from other nanoparticles containing barcodes for subsequent analysis and further processing of a viable T cell.

Abstract: Disclosed herein is a surfactant additive, ethylenediamine tetrakis(ethoxylate-block-propoxylate) tetrol with 16 ethylene oxide repeat units and 18 propylene oxide repeat units (known by its trade name as Tetronic 90R4) used as a droplet-additive, or to coat DMF driving electrode surfaces which dramatically improves the capability to work with high-protein-content liquids (e.g., whole blood) on digital microfluidic chips. This surfactant prevents protein adsorption and fouling of DMF electrode surfaces to an extent that was heretofore impossible. Specifically, this surfactant allows for the manipulation of droplets of undiluted whole blood for >1 hour per electrode (>1 50 times better than what is possible for any known additive). This improvement in handling high protein content media will revolutionize blood-based diagnostics on digital microfluidic platforms.

Abstract: Disclosed herein is a surfactant additive, ethylenediamine tetrakis(ethoxylate-block-propoxylate) tetrol with 16 ethylene oxide repeat units and 18 propylene oxide repeat units (known by its trade name as Tetronic 90R4) used as a droplet-additive, or to coat DMF driving electrode surfaces which dramatically improves the capability to work with high-protein-content liquids (e.g., whole blood) on digital microfluidic chips. This surfactant prevents protein adsorption and fouling of DMF electrode surfaces to an extent that was heretofore impossible. Specifically, this surfactant allows for the manipulation of droplets of undiluted whole blood for >1 hour per electrode (>1 50 times better than what is possible for any known additive). This improvement in handling high protein content media will revolutionize blood-based diagnostics on digital microfluidic platforms.

Abstract: An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area.

Abstract: An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area.