Patents by Inventor Alrun Guenther

Alrun Guenther has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9705098
    Abstract: The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: July 11, 2017
    Assignee: Novaled GmbH
    Inventors: Hans Kleemann, Bjoern Luessem, Karl Leo, Alrun Guenther
  • Patent number: 9620730
    Abstract: Organic electronic devices and methods for making organic electronic devices are provided. The organic electronic devices may include a gate electrode, a gate insulator, an organic semiconducting layer, a contact improving layer, a source electrode, and a drain electrode. The source electrode and the drain electrode may be arranged on the contact improving layer, and the contact improving layer may include an organic dopant material which is soluble in Hydrofluorether.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: April 11, 2017
    Assignee: Novaled GmbH
    Inventors: Alrun Guenther, Hans Kleemann, Bjoern Luessem, Karl Leo, Daniel Kasemann
  • Publication number: 20160049605
    Abstract: Organic electronic devices and methods for making organic electronic devices are provided. The organic electronic devices may include a gate electrode, a gate insulator, an organic semiconducting layer, a contact improving layer, a source electrode, and a drain electrode. The source electrode and the drain electrode may be arranged on the contact improving layer, and the contact improving layer may include an organic dopant material which is soluble in Hydrofluorether.
    Type: Application
    Filed: August 14, 2015
    Publication date: February 18, 2016
    Inventors: Alrun Guenther, Hans Kleemann, Bjoern Luessem, Karl Leo, Daniel Kasemann
  • Publication number: 20160049603
    Abstract: The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.
    Type: Application
    Filed: April 15, 2014
    Publication date: February 18, 2016
    Applicant: NOVALED GMBH
    Inventors: Hans Kleemann, Bjoern Luessem, Karl Leo, Alrun Guenther