Patents by Inventor Altansargai BUYANDALAI
Altansargai BUYANDALAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190035448Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.Type: ApplicationFiled: September 28, 2018Publication date: January 31, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yushi KATO
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Patent number: 10170694Abstract: A magnetic memory of an embodiment includes: a first conductive layer, which is nonmagnetic and includes at least a first element, the first conductive layer including a first to fifth regions; a first magnetoresistive element disposed corresponding to the third region and including a first magnetic layer, a second magnetic layer including at least a second element, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, a second nonmagnetic layer disposed between the second magnetic layer and the first nonmagnetic layer and including at least a third element, and a third magnetic layer disposed between the second nonmagnetic layer and the first nonmagnetic layer; a second conductive layer disposed corresponding to the second region and including at least the first to third elements; and a third conductive layer disposed corresponding to the fourth region, and including at least the first to third elements.Type: GrantFiled: March 5, 2018Date of Patent: January 1, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura, Katsuhiko Koui, Tomoaki Inokuchi, Hiroaki Yoda
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Publication number: 20180375016Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.Type: ApplicationFiled: August 31, 2018Publication date: December 27, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Mariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai
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Patent number: 10141037Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: GrantFiled: September 14, 2017Date of Patent: November 27, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
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Patent number: 10109332Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.Type: GrantFiled: September 14, 2017Date of Patent: October 23, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Mariko Shimizu, Yuichi Ohsawa, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai, Yushi Kato
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Patent number: 10109334Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: GrantFiled: December 20, 2017Date of Patent: October 23, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Patent number: 10096770Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.Type: GrantFiled: March 3, 2017Date of Patent: October 9, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Mariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai
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Publication number: 20180277185Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.Type: ApplicationFiled: September 14, 2017Publication date: September 27, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yushi KATO
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Publication number: 20180268888Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: ApplicationFiled: September 14, 2017Publication date: September 20, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi OHSAWA, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
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Publication number: 20180190336Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: ApplicationFiled: February 28, 2018Publication date: July 5, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Altansargai BUYANDALAI, Naoharu SHIMOMURA
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Publication number: 20180159024Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: September 14, 2017Publication date: June 7, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Altansargai Buyandalai, Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Hiroaki Yoda, Tomoaki Inokuchi
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Patent number: 9966122Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: GrantFiled: March 3, 2017Date of Patent: May 8, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura
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Publication number: 20180114558Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Publication number: 20180040812Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.Type: ApplicationFiled: March 3, 2017Publication date: February 8, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hiroaki YODA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI
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Publication number: 20180040357Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: ApplicationFiled: March 3, 2017Publication date: February 8, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Altansargai BUYANDALAI, Naoharu SHIMOMURA
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Patent number: 9881660Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: GrantFiled: September 16, 2016Date of Patent: January 30, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Publication number: 20170169872Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: ApplicationFiled: September 16, 2016Publication date: June 15, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki YODA, Naoharu SHIMOMURA, Yuichi OHSAWA, Tadaomi DAIBOU, Tomoaki INOKUCHI, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yuuzo KAMIGUCHI