Patents by Inventor Alun Davies

Alun Davies has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140062884
    Abstract: Input devices for a computer-based system include a touch screen comprising a dynamic input portion on which context-sensitive user inputs may be displayed, a cursor control comprising a palm rest and a track ball. The palm rest may be located relative to the track ball and the dynamic input portion of the touch screen for ease of use by the user.
    Type: Application
    Filed: December 19, 2012
    Publication date: March 6, 2014
    Applicant: GE AVIATION SYSTEMS LIMITED
    Inventors: John Alun Davies, Luke Patrick Bolton, Stephane Collet-Vander Eecken
  • Publication number: 20130207947
    Abstract: A cockpit for an aircraft includes a windscreen through which light may pass, at least one seat spaced from and facing the windscreen, a flight deck having at least a portion disposed below the windscreen and having at least one head down display having an adjustable brightness that may be set by a brightness signal, a camera having a field of view including at least a portion of the at least one seat and outputting an image signal indicative of luminance information within the field of view, and a processor operably coupled to the camera and the head down display and configured to receive the image signal, determine a luminance of at least a portion of the field of view, determine a brightness for the head down display based on the determined luminance, and outputting to the head down display a brightness signal corresponding to the determined brightness.
    Type: Application
    Filed: September 2, 2011
    Publication date: August 15, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: John Alun Davies
  • Publication number: 20120327051
    Abstract: A cockpit for an aircraft includes a windscreen through which light may pass, at least one seat spaced from and facing the windscreen, a flight deck having at least a portion disposed below the windscreen and having at least one head down display having an adjustable brightness that may be set by a brightness signal, a camera having a field of view including at least a portion of the at least one seat and outputting an image signal indicative of luminance information within the field of view, and a processor operably coupled to the camera and the head down display and configured to receive the image signal, determine a luminance of at least a portion of the field of view, determine a brightness for the head down display based on the determined luminance, and outputting to the head down display a brightness signal corresponding to the determined brightness.
    Type: Application
    Filed: September 2, 2011
    Publication date: December 27, 2012
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: John Alun Davies
  • Patent number: 8115233
    Abstract: A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer on the semiconductor layer, a source and a drain on the ohmic contact layer, at least one gate on the semiconductor layer between source and drain, at least one gate of the first transistor and one gate of the second transistor being matched gates, each gate having the same effective thickness of electrically conducting layer beneath it, but the gates having different gate lengths.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: February 14, 2012
    Assignee: RFMD (UK) Limited
    Inventor: Richard Alun Davies
  • Patent number: 8101973
    Abstract: A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the emitter layer comprising an upper emitter layer and a lower emitter layer between the upper emitter layer and base; the collector, base and emitter layers being npn or pnp doped respectively; characterized in that the lower emitter layer has a larger bandgap than the base layer and is AlxIn1-xP or GaxAl1-xP, x being in the range 0+ to 1.
    Type: Grant
    Filed: March 27, 2008
    Date of Patent: January 24, 2012
    Assignee: RFMD (UK) Limited
    Inventors: Matthew Francis O'Keefe, Robert Grey, Michael Charles Clausen, Richard Alun Davies
  • Publication number: 20110294865
    Abstract: The present invention provides a neurosecretory protein VGF peptide useful in qualifying Alzheimer's disease status in a patient. In particular, this peptide and modified forms thereof may be used to classify a subject sample as Alzheimer's disease or non-Alzheimer's disease. The peptide biomarker can be detected by SELDI mass spectrometry.
    Type: Application
    Filed: July 2, 2010
    Publication date: December 1, 2011
    Applicant: VERMILLION, INC.
    Inventors: Huw Alun Davies, Kaj Blennow, James McGuire, Valdimir Podust, Anja Hviid Simonsen
  • Patent number: 7993868
    Abstract: The present invention provides protein-based biomarkers and biomarker combinations that are useful in qualifying Alzheimer's disease status in a patient. In particular, the biomarkers of this invention are useful to classify a subject sample as Alzheimer's disease or non-Alzheimer's disease. The biomarkers can be detected by SELDI mass spectrometry.
    Type: Grant
    Filed: April 11, 2006
    Date of Patent: August 9, 2011
    Assignee: Vermillion, Inc.
    Inventors: Huw Alun Davies, Kaj Blennow, James Norton McGuire, Vladimir N. Podust, Anja Hviid Simonsen
  • Publication number: 20110136341
    Abstract: A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer on the semiconductor layer, a source and a drain on the ohmic contact layer, at least one gate on the semiconductor layer between source and drain, at least one gate of the first transistor and one gate of the second transistor being matched gates, each gate having the same effective thickness of electrically conducting layer beneath it, but the gates having different gate lengths.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 9, 2011
    Applicant: RFMD (UK) LIMITED
    Inventor: Richard Alun Davies
  • Publication number: 20110129920
    Abstract: The present invention provides protein-based biomarkers and biomarker combinations that are useful in qualifying Alzheimer's disease status in a patient. In particular, the biomarkers of this invention are useful to classify a subject sample as Alzheimer's or non-Alzheimer's dementia or normal. The biomarkers can be detected by SELDI mass spectrometry. In addition, the invention provides appropriate treatment interventions and methods for measuring response to treatment. Certain biomarkers of the invention may also be suitable for employment as radio-labeled ligands in non-invasive imaging techniques such as Positron Emission Tomography (PET).
    Type: Application
    Filed: July 28, 2010
    Publication date: June 2, 2011
    Applicant: Vermillion, Inc.
    Inventors: Huw Alun Davies, James McGuire, Anja Hviid Simonsen, Kaj Blennow, Vladimir Podust
  • Patent number: 7880198
    Abstract: A compound field effect transistor having multiple pinch-off voltages comprising: first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein; an ohmic contact layer on the semiconductor layer; a source and a drain on the ohmic contact layer; at least one gate on the semiconductor layer between source and drain; at least one gate of the first transistor and one gate of the second transistor being matched gates, each gate having the same effective thickness of electrically conducting layer beneath it but the gates having different gate lengths.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: February 1, 2011
    Assignee: RFMD (UK) Limited
    Inventor: Richard Alun Davies
  • Patent number: 7868356
    Abstract: A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: January 11, 2011
    Assignee: Filtronic PLC
    Inventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
  • Patent number: 7794948
    Abstract: The present invention provides protein-based biomarkers and biomarker combinations that are useful in qualifying Alzheimer's disease status in a patient. In particular, the biomarkers of this invention are useful to classify a subject sample as Alzheimer's or non-Alzheimer's dementia or normal. The biomarkers can be detected by SELDI mass spectrometry. In addition, the invention provides appropriate treatment interventions and methods for measuring response to treatment. Certain biomarkers of the invention may also be suitable for employment as radio-labeled ligands in non-invasive imaging techniques such as Positron Emission Tomography (PET).
    Type: Grant
    Filed: November 6, 2004
    Date of Patent: September 14, 2010
    Assignee: Vermilllion, Inc.
    Inventors: Huw Alun Davies, James McGuire, Anja Hviid Simonsen, Kaj Blennow, Vladimir Podust
  • Patent number: 7749716
    Abstract: The present invention provides a neurosecretory protein VGF peptide useful in qualifying Alzheimer's disease status in a patient. In particular, this peptide and modified forms thereof may be used to classify a subject sample as Alzheimer's disease or non-Alzheimer's disease. The peptide biomarker can be detected by SELDI mass spectrometry.
    Type: Grant
    Filed: June 13, 2006
    Date of Patent: July 6, 2010
    Assignee: Vermilllion, Inc.
    Inventors: Huw Alun Davies, Kaj Blennow, James McGuire, Vladimir Podust, Anja Hviid Simonsen
  • Publication number: 20090261382
    Abstract: A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.
    Type: Application
    Filed: April 30, 2009
    Publication date: October 22, 2009
    Applicant: FILTRONIC PLC
    Inventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
  • Publication number: 20090226897
    Abstract: The present invention provides protein-based biomarkers and biomarker combinations that are useful in qualifying Alzheimer's disease status in a patient. In particular, the biomarkers of this invention are useful to classify a subject sample as Alzheimer's disease or non-Alzheimer's disease. The biomarkers can be detected by SELDI mass spectrometry.
    Type: Application
    Filed: April 11, 2006
    Publication date: September 10, 2009
    Applicant: Vermillion, Inc
    Inventors: Huw Alun Davies, Kaj Blennow, James Norton McGuire, Vladimir N. Podust, Anja Hviid Simonsen
  • Patent number: 7538365
    Abstract: A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact layer has a recess structure disposed therethrough to the semiconductor channel layer. The bottom of the ohmic contact layer includes an etch stop layer including Aluminum and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.
    Type: Grant
    Filed: June 15, 2005
    Date of Patent: May 26, 2009
    Assignee: Filtronic PLC
    Inventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
  • Publication number: 20080237643
    Abstract: A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the emitter layer comprising an upper emitter layer and a lower emitter layer between the upper emitter layer and base; the collector, base and emitter layers being npn or pnp doped respectively; characterised in that the lower emitter layer has a larger bandgap than the base layer and is AlxIn1-xP or GaxAl1-xP, x being in the range 0+ to 1.
    Type: Application
    Filed: March 27, 2008
    Publication date: October 2, 2008
    Applicant: FITRONIC COMPOUND SEMICONDUCTORS LIMITED
    Inventors: Matthew Francis O'Keefe, Robert Grey, Michael Charles Clausen, Richard Alun Davies
  • Publication number: 20080153303
    Abstract: A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.
    Type: Application
    Filed: March 7, 2008
    Publication date: June 26, 2008
    Applicant: FILTRONIC PLC
    Inventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
  • Publication number: 20060147932
    Abstract: The invention relates, in general, to a method of screening for agents that modulate NGF activity. More specifically this invention provides a method of assessing the ability of a candidate agent to modulate NGF activity comprising, measuring the level of expression of one or more or two or more NGF responsive genes in a culture of neurons expressing the high-affinity trk A receptor after contact with a candidate agent. The invention further provides methods of culturing primary cultures of neurons expressing the high-affinity trk A receptor and methods of isolating polynucleotides from such cultures.
    Type: Application
    Filed: January 20, 2004
    Publication date: July 6, 2006
    Inventors: Alun Davies, Jan Grimm, Sean Wyatt
  • Patent number: 6526490
    Abstract: A processing system has a processor with a memory map identifying locations in a memory where data are stored, data associated with an application being stored at the same location every time an application is run. The processor runs each application during specified processing time slots. A monitor contains information as to the memory locations associated with each application and the time slots during which each application should be run. The monitor also has a register containing a keyword, which is compared with a keyword supplied by the processor 1 when it switches between user mode and supervisory mode so that the monitor denies access to memory locations associated with the other mode.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: February 25, 2003
    Assignee: Smiths Group PLC
    Inventors: John Alun Davies, James Frederick Moore, Peter John Stevens, Denis Vaughan Weale