Patents by Inventor Alvarado Tarun

Alvarado Tarun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic device grade single crystal diamonds and method of producing the same
    Patent number: 10550492
    Abstract: A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: February 4, 2020
    Inventors: Devi Shanker Misra, Alvarado Tarun
  • ELECTRONIC DEVICE GRADE SINGLE CRYSTAL DIAMONDS AND METHOD OF PRODUCING THE SAME
    Publication number: 20160201221
    Abstract: A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.
    Type: Application
    Filed: November 17, 2015
    Publication date: July 14, 2016
    Applicant: IIA Technologies Pte. Ltd.
    Inventors: Devi Shanker Misra, Alvarado Tarun