Abstract: In an embodiment a micro semiconductor LED structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, which is arranged on the first semiconductor layer, an active layer sequence including a first edge layer of the first conductivity type facing the first semiconductor layer and a second edge layer of the second conductivity type facing away from the first semiconductor layer and a third semiconductor layer of the second conductivity type, which is arranged at least on the active layer sequence, wherein the second semiconductor layer has at least one window, which penetrates through the second semiconductor layer from a side of the second semiconductor layer facing away from the first semiconductor layer toward the first semiconductor layer, wherein the first semiconductor layer has a recess in a region of the window, and wherein the active layer sequence is arranged at least in the recess.

Abstract: The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

Abstract: In an embodiment an optoelectronic component with an epitaxial layer sequence comprises a functional inner region having a first electrical contact and a second electrical contact opposite the first electrical contact, as well as semiconductor layers arranged between the first electrical contact and the second electrical contact configured to generate light. The semiconductor layers comprise a base area that increases towards the second electrical contact. A dielectric passivation layer is arranged on the side walls of the semiconductor layers. A mirror layer surrounds the passivation layer at a distance thereby forming a gap. The second electrical contact and a plane of the gap surrounding the second electrical contact form a common light-emitting surface.

Abstract: An optoelectronic device is specified including emitters, each emitter configured to emit electromagnetic radiation, and an assigned receiver for each emitter, configured to receive at least part of the electromagnetic radiation emitted by the emitter, wherein the emitters are configured to be operated with an input voltage, each receiver is configured to provide at least part of an output voltage, each emitter is physically connected to the assigned receiver.

Abstract: A converter device has a primary coil, a secondary coil and a first semiconductor layer. The primary coil and the secondary coil are each flat, each has at least one winding and each is coaxially arranged. The primary coil is arranged on a bottom face of the first semiconductor layer and the secondary coil is arranged on a top face of the first semi-conductor layer.

Abstract: An optoelectronic device is specified, including an emitter, operated with an electrical input voltage and configured to emit electromagnetic radiation during operation, a receiver, configured to convert electromagnetic radiation emitted by the emitter to an output voltage, wherein the receiver includes a semiconductor layer sequence with a plurality of stacked active layers, electromagnetic radiation emitted by the emitter is coupled into the receiver via a first side face of the semiconductor layer sequence, and the electromagnetic radiation propagates parallel to a main extension plane of the active layer inside the active layer, where it is gradually absorbed and converted into an electrical voltage.

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first layer and the second layer, the semiconductor layer sequence having at least one injection region, wherein the first layer includes a first conductivity type, wherein the second layer includes a second conductivity type, wherein the semiconductor layer sequence includes the first conductivity type within the entire injection region, wherein the injection region, starting from the first layer, at least partially penetrates the active layer, wherein side surfaces of the semiconductor layer sequence are formed at least in places by the injection region, and wherein the injection region is configured to inject charge carriers directly into the active layer.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconducting recombination layer for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements on a first side of the recombination layer, at least one second contact element on the first side of the recombination layer, a plurality of semiconducting first connection regions, and at least one semiconducting second connection region. Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.

Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength ?0 of the laser to ?0+?? from a value R0, wherein ?? is selected as a function of a temperature-dependent shift in an emission wavelength.

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first layer and the second layer, the semiconductor layer sequence having at least one injection region, wherein the first layer includes a first conductivity type, wherein the second layer includes a second conductivity type, wherein the semiconductor layer sequence includes the first conductivity type within the entire injection region, wherein the injection region, starting from the first layer, at least partially penetrates the active layer, wherein side surfaces of the semiconductor layer sequence are formed at least in places by the injection region, and wherein the injection region is configured to inject charge carriers directly into the active layer.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconducting recombination layer (1) for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements (31) on a first side (11) of the recombination layer, at least one second contact element (32) on the first side of the recombination layer, a plurality of semiconducting first connection regions (21), and at least one semiconducting second connection region (22). Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10).

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10).

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.