Abstract: The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described.

Abstract: The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added.

Abstract: The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added.

Abstract: The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described.

Abstract: The present invention is directed to methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects by allowing design rules on degradation to be included in the netlist. Once the hot-carrier circuit simulation is launched, the rules are checked and the reliability design rule violations are reported. The process can be performed on either the layout or schematic window. The design rule criteria can be any device parameter and can be expressed in absolute or relative terms. The criteria can be based on device type, model card name, instance geometry, or temperature. Additionally, values can be set prior to beginning the simulation.

Abstract: The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described.