Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.

Abstract: Monolithic microwave integrated circuit (MMIC) components and micro electromechanical systems (MEMS) components are integrated onto a single substrate at a wafer scale, by first performing MMIC and MEMS fabrication on a front face of a thick substrate wafer, bonding the substrate wafer to a cover wafer, thinning the back face of the substrate wafer and, finally, completing MMIC and MEMS fabrication on the back face of the thinned substrate wafer. The fabrication process is facilitated by use of a guard ring between the wafers to provide additional mechanical support to the substrate wafer and to protect the devices while the MMIC/MEMS fabrication is completed, and by a low temperature bonding process to join the substrate wafer and the cover wafer at multiple device cavity seal rings.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: A reflective grating (18) having spaced grid lines (36) patterned on a piezoelectric substrate (12) for controlling the magnitude and phase of surface acoustic waves (28) in a reflective filter (10) or resonator. The magnitude and phase of the surface acoustic wave (28) are controlled by a sampling period (34) of the reflective grating (18) and the density and sequence of distributed acoustic reflective dots (42). The reflective dots (42) are randomly distributed within gaps (40) between adjacent grid lines (36) or on top of the grid lines (36) of the reflective grating (18). The pattern of the reflective dots distributed within the gaps (40) or on the grid lines (36) is determined by the dot density, where the dot density varies from a lowest density of 0 to a maximum density of 1.

Abstract: A dual track SAW reflector filter (150) including a first track (152) and a second track (154). The first track and the second track (152, 154) include an input transducer (156, 164), an output transducer (158, 166), first reflectors (160, 168) and second reflectors (162, 170). The reflectivity function of the first reflectors (160, 168) and the second reflectors (162, 170) are equal in magnitude and opposite in phase. The input transducers (156, 164) have the same polarity and the output transducers (158, 166) have opposite polarities. Surface acoustic waves produced by the input transducers (156, 164) and received directly by the output transducers (158, 166) are in phase and cancel at the output transducers (158, 166). Surface acoustic waves reflected by the reflectors (160, 162, 168 and 170) are in phase and add at the output transducers (158, 166).

Abstract: A dual track SAW reflector filter (150) including a first track (152) and a second track (154). The first track and the second track (152, 154) include an input transducer (156, 164), an output transducer (158, 166), first reflectors (160, 168) and second reflectors (162, 170). The reflectivity function of the first reflectors (160, 168) and the second reflectors (162, 170) are equal in magnitude and opposite in phase. The input transducers (156,164) have the same polarity and the output transducers (158, 166) have opposite polarities. Surface acoustic waves produced by the input transducers (156, 164) and received directly by the output transducers (158, 166) are in phase and cancel at the output transducers (158, 166). Surface acoustic waves reflected by the reflectors (160, 162, 168 and 170) are in phase and add at the output transducers (158, 166).

Abstract: A reflective grating (18) having spaced grid lines (36) patterned on a piezoelectric substrate (12) for controlling the magnitude and phase of surface acoustic waves (28) in a reflective filter (10) or resonator. The magnitude and phase of the surface acoustic wave (28) are controlled by a sampling period (34) of the reflective grating (18) and the density and sequence of distributed acoustic reflective dots (42). The reflective dots (42) are randomly distributed within gaps (40) between adjacent grid lines (36) or on top of the grid lines (36) of the reflective grating (18). The pattern of the reflective dots distributed within the gaps (40) or on the grid lines (36) is determined by the dot density, where the dot density varies from a lowest density of 0 to a maximum density of 1.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: The invention relates to a new family of surface acoustic wave single-phase unidirectional transducers (SPUDTs) by using M uniform width, uniformly spaced, single-level interdigitated electrodes lying on a uniform grid of a piezoelectric substrate where unidirectionality is achieved by selectively etching reflective structures into the substrate either in the spaces located between adjacent electrodes or under selected electrodes of the transducer. A SAW filter, resonator or delay line can also be formed by fabricating two such transducers on a single substrate, each having surface acoustic waves radiating towards the other.

Abstract: The invention relates to a new family of surface acoustic wave single-phase unidirectional transducers (SPUDTs) by using M uniform width, uniformly spaced, single-level interdigitated electrodes lying on a uniform grid of a piezoelectric substrate where unidirectionality is achieved by selectively etching reflective structures into the substrate either in the spaces located between adjacent electrodes or under selected electrodes of the transducer. A SAW filter, resonator or delay line can also be formed by fabricating two such transducers on a single substrate, each having surface acoustic waves radiating towards the other.

Abstract: An adjustable surface acoustic wave (SAW) transducer is fabricated on a piezoelectric substrate. The adjustable SAW transducer includes a plurality of SAW interdigital transducer (IDT) fingers disposed on the substrate. Miniature switches are used to provide a plurality of interconnection patterns between the SAW IDT fingers such that a plurality of SAW characteristics can be generated from a single set of SAW IDT fingers.

Abstract: An RF switch and a process for fabricating an RF switch which includes multiple throws and can be fabricated utilizing only a single layer of metallization. The switch in accordance with the present invention includes an airbridge suspended beam disposed adjacent to one or more metal traces. One or more control pads are disposed adjacent to the airbridged suspended beam to operate the switch electrostatically. The suspended beam as well as the metal traces and contact pads are all fabricated with a single metallization layer. The switch is configured such that deflection of the beam is in a plane generally parallel to the plane of the substrate. By eliminating multiple metallization layers, the complexity for fabricating the switch is greatly reduced. Moreover, the switch configuration also allows multiple throws and multiple poles using a single level of metallization.

Abstract: The present invention provides a new and effective method for the sealing and electrical testing of electronic devices; and particularly for surface acoustic wave devices. In accordance with the present invention, the cost and size of making hermetically sealed packages for electronic devices and of electrically testing each device is significantly reduced over the prior art by making use of mass simultaneous sealing and electrical connection at the wafer level, and by using substrates with hermetically sealed and electrically conductive via holes. Further, cost reduction is effected by making use of final electrical testing with wafer probe test techniques before dicing.

Abstract: An acoustic wave filter device with low loss and low passband ripple characteristics. The filter comprises three bidirectional electroacoustical transducers disposed along a common axis on the surface of a substrate of piezoelectric material. The two outer transducers of the three function as input transducers and the center transducer functions as an output transducer. One of the input transducers is of the antisymmetric type and has a transfer characteristic that differs in phase angle by ninety degrees with respect to the other input transducer, which is of the symmetric type. This ninety-degree difference applies at all frequencies, so that any energy reflected from the output transducer and again reflected by an input transducer will be subject to a phase shift of 180 degrees in the case of energy reflected from the antisymmetric input transducer, and no phase shift in the case of the symmetric input transducer.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.