Abstract: A method of thin film patterning by reflow. A first metal trace is deposited onto a surface of a substrate in a predetermined pattern. A second metal trace is then deposited onto the deposited first metal trace. Next, a thin film of a third metal is deposited onto the entire surface of the substrate and onto the deposited first and second metal traces. The substrate and the associated deposited metals are then heated to cause the deposited thin film of the third metal to flow and bead onto the second metal trace.

Abstract: Disclosed is a thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR). A piezoelectric film is positioned between a first electrode and a second electrode and positioned adjacent a semiconductor substrate containing a via hole. A variable voltage source applies a DC bias voltage to the electrodes which causes an electric field to be created between the electrodes within the piezoelectric film. The resulting electric field causes the piezoelectric film to resonate at a frequency different than its unbiased resonant frequency. By adjusting the variable voltage source to change the DC bias voltage, the resonant frequency from the thin film semiconductor bulk acoustic resonator (SBAR) can be varied.