Patents by Inventor Alwin James TSAO

Alwin James TSAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for 1/F noise reduction in NMOS devices
    Patent number: 8753938
    Abstract: An integrated circuit, in which a minimum gate length of low-noise NMOS transistors is less than twice a minimum gate length of logic NMOS transistors, is formed by: forming gates of the low-noise NMOS transistors concurrently with gates of the logic NMOS transistors, forming a low-noise NMDD implant mask which exposes the low-noise NMOS transistors and covers the logic NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and fluorine into the low-noise NMOS transistors and limiting p-type halo dopants to less than 20 percent of a corresponding logic NMOS halo dose, removing the low-noise NMDD implant mask, forming a logic NMDD implant mask which exposes the logic NMOS transistors and covers the low-noise NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and p-type halo dopants, but not implanting fluorine, into the logic NMOS transistors, and removing the logic NMDD implant mask.
    Type: Grant
    Filed: January 7, 2014
    Date of Patent: June 17, 2014
    Assignee: Texes Instruments Incorporated
    Inventors: Alwin James Tsao, Purushothaman Srinivasan
  • METHOD FOR 1/F NOISE REDUCTION IN NMOS DEVICES
    Publication number: 20140120674
    Abstract: An integrated circuit, in which a minimum gate length of low-noise NMOS transistors is less than twice a minimum gate length of logic NMOS transistors, is formed by: forming gates of the low-noise NMOS transistors concurrently with gates of the logic NMOS transistors, forming a low-noise NMDD implant mask which exposes the low-noise NMOS transistors and covers the logic NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and fluorine into the low-noise NMOS transistors and limiting p-type halo dopants to less than 20 percent of a corresponding logic NMOS halo dose, removing the low-noise NMDD implant mask, forming a logic NMDD implant mask which exposes the logic NMOS transistors and covers the low-noise NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and p-type halo dopants, but not implanting fluorine, into the logic NMOS transistors, and removing the logic NMDD implant mask.
    Type: Application
    Filed: January 7, 2014
    Publication date: May 1, 2014
    Applicant: Texas Instruments Incorporated
    Inventors: Alwin James TSAO, Purushothaman SRINIVASAN
  • Method for 1/F noise reduction in NMOS devices
    Patent number: 8653607
    Abstract: An integrated circuit, in which a minimum gate length of low-noise NMOS transistors is less than twice a minimum gate length of logic NMOS transistors, is formed by: forming gates of the low-noise NMOS transistors concurrently with gates of the logic NMOS transistors, forming a low-noise NMDD implant mask which exposes the low-noise NMOS transistors and covers the logic NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and fluorine into the low-noise NMOS transistors and limiting p-type halo dopants to less than 20 percent of a corresponding logic NMOS halo dose, removing the low-noise NMDD implant mask, forming a logic NMDD implant mask which exposes the logic NMOS transistors and covers the low-noise NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and p-type halo dopants, but not implanting fluorine, into the logic NMOS transistors, and removing the logic NMDD implant mask.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: February 18, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: Alwin James Tsao, Purushothaman Srinivasan
  • METHOD FOR 1/F NOISE REDUCTION IN NMOS DEVICES
    Publication number: 20120319210
    Abstract: An integrated circuit, in which a minimum gate length of low-noise NMOS transistors is less than twice a minimum gate length of logic NMOS transistors, is formed by: forming gates of the low-noise NMOS transistors concurrently with gates of the logic NMOS transistors, forming a low-noise NMDD implant mask which exposes the low-noise NMOS transistors and covers the logic NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and fluorine into the low-noise NMOS transistors and limiting p-type halo dopants to less than 20 percent of a corresponding logic NMOS halo dose, removing the low-noise NMDD implant mask, forming a logic NMDD implant mask which exposes the logic NMOS transistors and covers the low-noise NMOS transistors and logic PMOS transistors, ion implanting n-type NMDD dopants and p-type halo dopants, but not implanting fluorine, into the logic NMOS transistors, and removing the logic NMDD implant mask.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 20, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Alwin James TSAO, Purushothaman SRINIVASAN