Abstract: Disclosed herein are diaryl trehalose compounds and methods of use thereof, for example as vaccine adjuvants.

Abstract: Provided herein are methods of treating cancer with an anti-TIGIT antibody in combination with an anti-PD-1 antibody and/or an anti-PD-L1 antibody.

Abstract: Provided herein are methods of treating cancer with an antibody that binds an immune cell engager in combination with an antibody-drug conjugate.

Abstract: Electrospray devices and methods of fabricating electrospray devices are described.

Abstract: Disclosed herein are immunogenic trehalose compounds and methods of use thereof, for example as vaccine adjuvants.

Abstract: Electrospray devices and methods of fabricating electrospray devices are described

Abstract: Disclosed herein are diaryl trehalose compounds and methods of use thereof, for example as vaccine adjuvants.

Abstract: The invention relates to compounds of formula (I) and their use in eliciting a pro-Thl7 immune response. Further provided are methods of production of said compounds. (Formula I) wherein m is an integer between 4 and 13; n is an integer between 4 and 13; x is an integer between 4 and 13; y is an integer between 4 and 13.

Abstract: Disclosed herein are immunogenic trehalose compounds and methods of use thereof, for example as vaccine adjuvants.

Abstract: A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.

Abstract: Embodiments of the present invention provide a method for epitaxially growing a FinFET. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region.

Abstract: A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.