Patents by Inventor Amélie DUSSAIGNE
Amélie DUSSAIGNE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230369541Abstract: A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Carole Pernel, Amélie Dussaigne
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Publication number: 20230361246Abstract: A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.Type: ApplicationFiled: July 7, 2023Publication date: November 9, 2023Inventors: Carole Pernel, Amélie Dussaigne
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Patent number: 11749779Abstract: A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.Type: GrantFiled: December 16, 2020Date of Patent: September 5, 2023Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Carole Pernel, Amélie Dussaigne
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Patent number: 11735693Abstract: A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.Type: GrantFiled: December 16, 2020Date of Patent: August 22, 2023Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Carole Pernel, Amélie Dussaigne
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Publication number: 20220406968Abstract: A method for manufacturing a native emission matrix, comprising the following steps: a) providing a base structure comprising a substrate, a layer of GaN, a layer of doped In(x)GaN and an epitaxial regrowth layer of nid In(x)GaN, b) structuring first and second mesas in the base structure, the first mesa comprising a part of the layer of GaN, the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, the second mesa comprising a part of the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, c) electrochemically porosifying the second mesa, d) producing stacks on the mesas to form LED structures emitting at various wavelengths.Type: ApplicationFiled: June 10, 2022Publication date: December 22, 2022Inventors: Ludovic Dupre, Carole Pernel, Amélie Dussaigne, Patrick Le Maitre
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Publication number: 20220393065Abstract: A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps: a) providing a first stack comprising a GaN or InGaN layer to be porosified and a barrier layer, b) transferring the GaN or InGaN layer to be porosified and the barrier layer to a porosification support, in such a way as to form a second stack, c) forming a mask on the GaN or InGaN layer to be porosified, d) porosifying the GaN or InGaN layer through the mask, e) transferring the GaN or InGaN porosified layer and the barrier layer to a support of interest, f) forming an InGaN layer by epitaxy on the barrier layer, whereby a relaxed epitaxial InGaN layer is obtained.Type: ApplicationFiled: June 6, 2022Publication date: December 8, 2022Inventors: Amélie Dussaigne, Benjamin Damilano, Carole Pernel, Stéphane Vezian
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Patent number: 11495710Abstract: A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.Type: GrantFiled: December 2, 2020Date of Patent: November 8, 2022Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Adrien Gasse, Amélie Dussaigne, François Levy
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Patent number: 11424386Abstract: A light-emitting device including first, second, and third pixels, wherein: the first pixel includes a two-dimensional light-emitting cell including a vertical stack of a first semiconductor layer of a first conductivity type, of an active layer, and of a second semiconductor layer of the second conductivity type; each of the second and third pixels includes a three-dimensional light-emitting cell including a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure including a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and the nanostructures of the second and third pixels have different dimensions and/or a different spacing.Type: GrantFiled: October 22, 2019Date of Patent: August 23, 2022Assignee: Commissariat á l'Énergie Atomique et aux Énergies AlternativesInventor: Amélie Dussaigne
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Patent number: 11162188Abstract: The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (Ttt) no lower than 1050° C. and to a stream of ammonia.Type: GrantFiled: July 9, 2018Date of Patent: November 2, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Timotee Journot, Berangere Hyot, Armelle Even, Amelie Dussaigne, Bruno-Jules Daudin
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Publication number: 20210193870Abstract: A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.Type: ApplicationFiled: December 16, 2020Publication date: June 24, 2021Inventors: Carole Pernel, Amélie Dussaigne
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Publication number: 20210193873Abstract: A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.Type: ApplicationFiled: December 16, 2020Publication date: June 24, 2021Inventors: Carole Pernel, Amélie Dussaigne
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Publication number: 20210184078Abstract: Method for producing a patterned layer of material, comprising; producing a first substrate having a patterned face; producing, against the patterned face of the first substrate, a stack of layers comprising an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate; removing the first substrate; anisotropic etching the intermediate layer from the first face of the intermediate layer, and etching at least part of the thickness of the layer to be patterned, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.Type: ApplicationFiled: December 2, 2020Publication date: June 17, 2021Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Adrien GASSE, Amélie DUSSAIGNE, François LEVY
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Publication number: 20210115589Abstract: The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (Ttt) no lower than 1050° C. and to a stream of ammonia.Type: ApplicationFiled: July 9, 2018Publication date: April 22, 2021Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Timotee JOURNOT, Berangere HYOT, Armelle EVEN, Amelie DUSSAIGNE, Bruno-Jules DAUDIN
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Patent number: 10886429Abstract: The invention relates to a method of manufacturing an optoelectronic device (1) produced on the basis of GaN, comprising an emission structure (10) configured to emit a first light radiation at the first wavelength (?1), the method comprising the following steps: i. producing a growth structure (20) comprising a nucleation layer (23) of Inx2Ga1-x2N at least partially relaxed; ii. producing a conversion structure (30), comprising an emission layer (33) configured to emit light at a second wavelength (?2), and an absorption layer (34) produced on the basis of InGaN; iii. transfer of the conversion structure (30) onto the emission structure (10) in such a way that the absorption layer (34) is located between the emission structure (10) and the emission layer (33) of the conversion structure.Type: GrantFiled: December 18, 2018Date of Patent: January 5, 2021Assignees: Commissariat a l'energie atomique et aux energies alternatives, THALESInventors: Amelie Dussaigne, Ivan-Christophe Robin
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Publication number: 20200135976Abstract: A light-emitting device including first, second, and third pixels, wherein: the first pixel includes a two-dimensional light-emitting cell including a vertical stack of a first semiconductor layer of a first conductivity type, of an active layer, and of a second semiconductor layer of the second conductivity type; each of the second and third pixels includes a three-dimensional light-emitting cell including a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure including a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and the nanostructures of the second and third pixels have different dimensions and/or a different spacing.Type: ApplicationFiled: October 22, 2019Publication date: April 30, 2020Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Amélie Dussaigne
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Patent number: 10615299Abstract: An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.Type: GrantFiled: September 29, 2015Date of Patent: April 7, 2020Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Ivan-Christophe Robin, Amélie Dussaigne, Guy Feuillet, Stéphanie Gaugiran
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Patent number: 10559713Abstract: A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a portion of the active area being sandwiched between the electrode and the lateral walls of the semiconductor element. The active area includes an alternation of first semiconductor layers mainly including a first element and a second element and of second semiconductor layers mainly including the first element and the second element and further including a third element. In at least three of the layers, the mass concentration of the third element increases in the portion of the active layer as the distance to the substrate decreases.Type: GrantFiled: September 20, 2016Date of Patent: February 11, 2020Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Amélie Dussaigne, Pierre Ferret
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Patent number: 10510535Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.Type: GrantFiled: July 13, 2016Date of Patent: December 17, 2019Assignees: Aledia, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Universite Grenoble AlpesInventors: Philipe Gilet, Amélie Dussaigne, Damien Salomon, Joel Eymery, Christophe Durand
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Publication number: 20190189835Abstract: The invention relates to a method of manufacturing an optoelectronic device (1) produced on the basis of GaN, comprising an emission structure (10) configured to emit a first light radiation at the first wavelength (?1), the method comprising the following steps: i. producing a growth structure (20) comprising a nucleation layer (23) of Inx2Ga1-x2N at least partially relaxed; ii. producing a conversion structure (30), comprising an emission layer (33) configured to emit light at a second wavelength (?2), and an absorption layer (34) produced on the basis of InGaN; iii. transfer of the conversion structure (30) onto the emission structure (10) in such a way that the absorption layer (34) is located between the emission structure (10) and the emission layer (33) of the conversion structure.Type: ApplicationFiled: December 18, 2018Publication date: June 20, 2019Applicants: Commissariat a l'energie atomique et aux energies alternatives, THALESInventors: Amelie DUSSAIGNE, Ivan-Christophe ROBIN
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Patent number: 10153393Abstract: A light emitting diode including an n-doped InXnGa(1-Xn)N layer and a p-doped InXpGa(1-Xp)N layer, and an active area arranged between the InXnGa(1-Xn)N layer and the InXpGa(1-Xp)N layer including: a first InN layer with a thickness eInN106; a second InN layer with a thickness eInN108; a separating layer arranged between the InN layers and including InXbGa(1-Xb)N and a thickness <3 nm; an InX1Ga(1-X1)N layer arranged between the InXnGa(1-Xn)N layer and the first InN layer; an InX2Ga(1-X2)N layer arranged between the InXpGa(1-Xp)N layer and the second InN layer; wherein the indium compositions Xn, Xp, Xb, X1 and X2 are between 0 and about 0.25, and wherein the thicknesses eInN106 and eInN108 are such that eInN106<eInN108.Type: GrantFiled: August 21, 2014Date of Patent: December 11, 2018Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, ALEDIAInventors: Ivan-Christophe Robin, Amelie Dussaigne