Patents by Inventor Amélie DUSSAIGNE

Amélie DUSSAIGNE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240297204
    Abstract: A method for producing a native emission matrix including the following steps of: a) providing a base structure including, successively, a substrate, a GaN layer, a doped In(x)GaN layer where x is from 0 to 8%, and an unintentionally doped In(x)GaN epitaxial regrowth layer; b) patterning mesas in the base structure, the mesas comprising a portion of the doped In(x)GaN layer and the unintentionally doped In(x)GaN epitaxial regrowth layer, whereby the mesas are electrically interconnected with one another; c) porosifying electrochemically the doped In(x)GaN layer; and d) carrying out a first LED structure and a second LED structure on the mesas, whereby a first LED having a first emission wavelength, and a second LED having a second emission wavelength, respectively, are obtained, and a native emission matrix is formed
    Type: Application
    Filed: June 13, 2022
    Publication date: September 5, 2024
    Inventors: Amélie DUSSAIGNE, Patrick LE MAITRE, Helge HAAS, Ludovic DUPRE, Carole PERNEL
  • Publication number: 20240213398
    Abstract: A method for manufacturing a growth substrate adapted to produce by epitaxy a matrix of diodes based on InGaN, including the following steps of: producing a crystalline stack including, from a conductive buffer layer: a lower layer based on doped GaN; then a separation intermediate layer, based on InGaN; then an upper layer (14) based on AlGaN; producing mesas of three categories M1, M2, M3, by localised etching of the crystalline stack; eliminating, by etching, the upper portion of at least the mesas M3, the upper portion of the mesas M1 being preserved; then non-photo-assisted electrochemically porosifying the lower portions of only the mesas M1 and M3, the lower portion of the mesas M2 being non-porosified.
    Type: Application
    Filed: December 19, 2023
    Publication date: June 27, 2024
    Inventors: Fabian ROL, Amélie DUSSAIGNE
  • Publication number: 20240186444
    Abstract: A method for manufacturing a growth substrate, including producing mesas based on GaN having various porosification levels, implementing differentiated steps of electrochemical porosification, non-photoassisted and photoassisted, of various portions of the mesas.
    Type: Application
    Filed: November 29, 2023
    Publication date: June 6, 2024
    Inventors: Ludovic DUPRE, Amélie DUSSAIGNE, Carole PERNEL, Fabian ROL
  • Publication number: 20210184078
    Abstract: Method for producing a patterned layer of material, comprising; producing a first substrate having a patterned face; producing, against the patterned face of the first substrate, a stack of layers comprising an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate; removing the first substrate; anisotropic etching the intermediate layer from the first face of the intermediate layer, and etching at least part of the thickness of the layer to be patterned, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.
    Type: Application
    Filed: December 2, 2020
    Publication date: June 17, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien GASSE, Amélie DUSSAIGNE, François LEVY
  • Publication number: 20160204312
    Abstract: An optoelectronic device comprises microwires or nanowires, each of which comprises an alternation of passivated portions and of active portions, the active portions being surrounded with an active layer, where the active layers do not extend on the passivated portions.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 14, 2016
    Inventors: Amélie DUSSAIGNE, Alain MILLION, Anne-Laure BAVENCOVE