Patents by Inventor Amada Lorena Montesdeoca Santana

Amada Lorena Montesdeoca Santana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9837259
    Abstract: A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: December 5, 2017
    Assignees: SunPower Corporation, Total Marketing Services
    Inventors: Scott Harrington, Venkatasubramani Balu, Amada Lorena Montesdeoca Santana
  • Publication number: 20160064207
    Abstract: A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 3, 2016
    Inventors: Scott Harrington, Balu Venkatasubramani, Amada Lorena Montesdeoca Santana